{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPA08N50C3XKAS1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPA08N50C3XKAS1","canonicalUrl":"https://icboms.com/infineon/SPA08N50C3XKAS1","factsUrl":"https://icboms.com/api/mcp/products/SPA08N50C3XKAS1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ series, N-Channel MOSFET, 560 V Drain-Source Voltage, 7.6 A Continuous Drain Current at 25°C, 600 mOhm RDS(on) at 4.6 A, 10 V, Through Hole, TO-220-3 Full Pack, -55°C to 150°C Junction.","salesMarkdown":"The SPA08N50C3XKAS1: Housed in a through-hole TO-220-3 Full Pack package with an isolated mounting hole. The 560 V drain-source rating provides margin for universal AC input with reflected voltage and leakage-inductance spikes. The 560 V Vdss is the maximum drain-to-source voltage the device can block in the off state. In a typical flyback converter, the primary-side MOSFET sees a reflected voltage plus a ringing spike. The 560 V rating gives derating margin for reliable operation over line and load transients. In a real enclosure where the case temperature rises, the current must be derated per the thermal curve in the datasheet. The 32 W power dissipation ceiling at the case sets the heatsink requirement. For BOM planning, this part carries no imminent LTB risk, and the CoolMOS™ family has broad second-source coverage from other manufacturers offering pin-compatible 560 V / 7 A–8 A TO-220 Full Pack MOSFETs. If dual-sourcing is a requirement, qualify an alternate now rather than during an allocation event. The PG-TO220-3-111 supplier package is the Infineon-specific variant of the standard TO-220 Full Pack.","metaTitle":"Infineon SPA08N50C3XKAS1 CoolMOS N-Ch MOSFET, 560V 7.6A","metaDescription":"Infineon SPA08N50C3XKAS1 CoolMOS N-channel MOSFET, 560V Vdss, 7.6A Id, 600mOhm RDS(on). Active lifecycle. Request quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 350µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4.6A, 10V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"560 V","Input Capacitance (Ciss) (Max) @ Vds":"750 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/62f0a6ff4cb407feff24587bc63da8b4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the RDS(on) of SPA08N50C3XKAS1?","answer":"The maximum on-resistance is 600 mΩ at a drain current of 4.6 A and a gate-to-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in the thermal design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPA08N50C3XKAS1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPA08N50C3XKAS1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}