{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPA08N50C3XK","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPA08N50C3XK","canonicalUrl":"https://icboms.com/infineon/SPA08N50C3XK","factsUrl":"https://icboms.com/api/mcp/products/SPA08N50C3XK","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPA08N50C3XK N-channel MOSFET, 560 V drain-source voltage, 7.6 A continuous drain current, 600 mΩ on-resistance at 10 V gate drive, PG-TO220-3-111 full-pack through-hole package.","salesMarkdown":"## What the 560 V / 7.6 A rating means for your power stage The SPA08N50C3XK: That 560 V rating puts it solidly in the 500 V–600 V class for off-line AC-DC converters, power-factor-correction stages, and flyback or LLC resonant topologies where the DC bus sits around 400 V. The 7.6 A figure is at Tc = 25 °C — in a real enclosure at 85 °C ambient you will derate that number, and the 32 W package limit is the ceiling to watch when sizing the heatsink. ## 600 mΩ Rds(on) — conduction loss and gate drive That 10 V drive level is the recommended operating point — the part is not characterised for logic-level gate thresholds. The maximum gate threshold voltage is 3.9 V at 350 µA, so a 5 V logic output will barely turn it on; you need a proper gate driver that swings to 10 V to get the rated Rds(on). ## TO-220 Full Pack — mounting and thermal interface The PG-TO220-3-111 full-pack package has the backside tab fully encapsulated in moulding compound, so the tab is electrically isolated from the drain. That saves you an insulating pad and washer when bolting to a grounded heatsink — just apply thermal grease and torque it down. Infineon lists the SPA08N50C3XK as Active.","metaTitle":"Infineon SPA08N50C3XK CoolMOS N-Ch MOSFET, 560V, 7.6A","metaDescription":"Infineon SPA08N50C3XK CoolMOS N-channel MOSFET, 560V Vdss, 7.6A Id, 600mΩ Rds(on) at 10V. Active lifecycle, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 350µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4.6A, 10V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"560 V","Input Capacitance (Ciss) (Max) @ Vds":"750 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/62f0a6ff4cb407feff24587bc63da8b4.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPA08N50C3XK","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPA08N50C3XK when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}