{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPA08N50C3","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPA08N50C3","canonicalUrl":"https://icboms.com/infineon/SPA08N50C3","factsUrl":"https://icboms.com/api/mcp/products/SPA08N50C3","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CoolMOS™ N-Channel Power MOSFET, SPA08N50C3, 560V Vdss, 7.6A Id, 600mOhm Rds(on), TO-220-3 Full Pack, Through Hole, ROHS3 Compliant.","salesMarkdown":"## Device identity and key parametrics The SPA08N50C3 is an N-channel power MOSFET from Infineon's CoolMOS™ series, built on a charge-compensation technology that reduces on-resistance per silicon area. Maximum on-resistance is 600 mOhm at a gate drive of 10 V and 4.6 A drain current. The threshold voltage is specified at 3.9 V maximum with a drain current of 350 µA, and the gate is rated to ±20 V. Maximum power dissipation is 32 W at the case temperature. ## Package, mounting, and temperature range Housed in a TO-220-3 Full Pack (PG-TO220-3-111) through-hole package, the device has a fully isolated backside — no heatsink pad is electrically live, which simplifies mounting to a grounded chassis or shared heatsink without an insulating washer. The junction temperature range is -55 °C to 150 °C. The Full Pack variant trades slightly higher thermal resistance for electrical isolation.","metaTitle":"SPA08N50C3 Infineon CoolMOS N-Ch MOSFET, 560V, 7.6A, TO-220","metaDescription":"SPA08N50C3 Infineon CoolMOS N-Channel MOSFET, 560V Vdss, 7.6A Id, 600mOhm Rds(on). Active production, ROHS3 compliant. Sourced to order.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 350µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4.6A, 10V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"560 V","Input Capacitance (Ciss) (Max) @ Vds":"750 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.8100","priceTiers":[{"qty":402,"price":"$0.75000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/62f0a6ff4cb407feff24587bc63da8b4.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPA08N50C3/alternatives.json"},"ai":{"faq":[{"question":"Will SPA08N50C3 drop into a board designed for IMZA65R027M1HXKSA1?","answer":"No — the IMZA65R027M1HXKSA1 is a 650 V CoolSiC™ MOSFET in a TO-247 package with a different gate drive range (18 V typical, ±23 V/-5 V max) and a much lower 34 mOhm Rds(on). The SPA08N50C3 is a 560 V CoolMOS™ in a TO-220 Full Pack. They are not pin-compatible or functionally interchangeable without a board redesign."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPA08N50C3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPA08N50C3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}