{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SKW07N120","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SKW07N120","canonicalUrl":"https://icboms.com/infineon/SKW07N120","factsUrl":"https://icboms.com/api/mcp/products/SKW07N120","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SKW07N120 NPT IGBT, 1200 V Vces, 16.5 A Ic, 27 A Icm, 125 W max, TO-247-3 through hole, -55 to 150 °C junction.","salesMarkdown":"## 1200 V NPT IGBT in TO-247-3 — BOM-fit for motor drive and power conversion The Infineon SKW07N120 is an NPT (non-punch-through) IGBT rated for 1200 V collector-emitter breakdown and 16.5 A continuous collector current, with a pulsed capability of 27 A. It comes in a TO-247-3 through-hole package (PG-TO247-3-1 supplier device package). The NPT construction provides a positive temperature coefficient, making it suitable for paralleling in higher-current stages without thermal runaway. ## Switching and conduction — 70 nC gate charge, 1 mJ switching energy Gate charge is 70 nC total, which sets the drive current needed for a given switching frequency — at 20 kHz the average gate drive current is about 1.4 mA, well within the capability of a standard gate-driver IC. Switching energy is 1 mJ under the test condition of 800 V bus, 8 A load, 47 Ohm gate resistor, and 15 V gate drive. Turn-on delay is 27 ns; turn-off delay is 440 ns at 25 °C junction. ## Conduction loss at the operating point Vce(on) is specified at 3.6 V maximum with Vge = 15 V and Ic = 8 A. This is the conduction loss floor at the test condition — actual on-state voltage rises with junction temperature, so the designer should derate for the expected hot-case junction temperature. The 125 W maximum power dissipation assumes the TO-247-3 package is mounted with adequate heatsinking. ## Temperature grade and application envelope The 150 °C maximum junction allows headroom for high ambient temperature in motor-drive cabinets or power-supply enclosures. The NPT IGBT also includes a co-packaged fast-recovery diode with a reverse recovery time of 60 ns, which reduces turn-on losses in hard-switching topologies. ROHS3 compliant.","metaTitle":"Infineon SKW07N120 NPT IGBT, 1200 V, 16.5 A, TO-247-3","metaDescription":"SKW07N120 NPT IGBT, 1200 V Vces, 16.5 A Ic, 27 A pulsed. Vce(on) 3.6 V at 15 V/8 A. Active production, TO-247-3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Bulk","IGBT Type":"NPT","Input Type":"Standard","Gate Charge":"70 nC","Power - Max":"125 W","Mounting Type":"Through Hole","Package / Case":"TO-247-3","Test Condition":"800V, 8A, 47Ohm, 15V","lifecycle_stage":"eol_hot","Switching Energy":"1mJ","Td (on/off) @ 25°C":"27ns/440ns","Operating Temperature":"-55°C ~ 150°C (TJ)","Supplier Device Package":"PG-TO247-3-1","Vce(on) (Max) @ Vge, Ic":"3.6V @ 15V, 8A","Reverse Recovery Time (trr)":"60 ns","Current - Collector (Ic) (Max)":"16.5 A","Current - Collector Pulsed (Icm)":"27 A","Voltage - Collector Emitter Breakdown (Max)":"1200 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.54","stockQuantity":0,"priceTiers":[{"qty":85,"price":"$3.54000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4b37c6d8912365f8ae0dcd8224af0c7a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is SKW07N120 equivalent to IKW07N120?","answer":"The IKW07N120 is a Trench-FS (field-stop) IGBT from the same Infineon family, not an NPT type. The two parts differ in construction and switching behaviour — the SKW07N120 uses NPT technology with a positive temperature coefficient, while the IKW07N120 uses Trench-FS with lower Vce(on) and faster switching. They are not direct equivalents; verify the circuit's switching frequency and drive requirements before substituting."},{"question":"What is the Vce(on) of SKW07N120 at 8 A?","answer":"The maximum Vce(on) is 3.6 V at Vge = 15 V and Ic = 8 A, measured at 25 °C junction temperature."},{"question":"Is SKW07N120 a NPT or Trench IGBT?","answer":"It is an NPT (non-punch-through) IGBT, not a trench type. NPT construction gives rugged short-circuit behaviour and a positive temperature coefficient that simplifies paralleling."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SKW07N120","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SKW07N120 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}