{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SIHB30N60ET1-GE3","brand":"Vishay","brandSlug":"vishay","productSlug":"SIHB30N60ET1-GE3","canonicalUrl":"https://icboms.com/vishay/SIHB30N60ET1-GE3","factsUrl":"https://icboms.com/api/mcp/products/SIHB30N60ET1-GE3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay SIHB30N60ET1-GE3 N-Channel MOSFET, 600 Vdss, 29 A continuous drain, 125 mOhm Rds(on) at 15 A, 10 V, TO-263-3 D²Pak surface mount, Tape & Reel.","salesMarkdown":"## 600 V, 29 A N-channel — the conduction-loss anchor The SIHB30N60ET1-GE3 is a 600 V, 29 A N-channel power MOSFET from Vishay's E series, built on a metal-oxide trench technology. A gate driver sourcing 1 A charges the gate in roughly 130 ns — fast enough for a 50-100 kHz hard-switched converter, but the 2600 pF input capacitance at 100 V drain-source means the driver must supply peak current during the Miller plateau. Plan the gate-drive loop inductance accordingly. ## Package and thermal path The junction-to-case thermal path dominates — without adequate board-level heatsinking the die temperature rises well above the 150°C absolute maximum long before the package limit is reached. Available on Tape & Reel and Cut Tape, the reel quantity suits automated pick-and-place assembly. The ±30 V maximum gate-source rating provides margin against gate-drive overshoot in hard-switching topologies. No stock-holding claim is made — each RFQ is handled on its own lead-time and lot-traceability terms.","metaTitle":"SIHB30N60ET1-GE3 Vishay N-Ch MOSFET, 600V, 29A, D²Pak","metaDescription":"Vishay SIHB30N60ET1-GE3 N-channel 600V MOSFET, 29A continuous drain, 125mOhm Rds(on) at 10V. Active production. Sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 15A, 10V","Power Dissipation (Max)":"250W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"130 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2600 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"29A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.18","priceTiers":[{"qty":1,"price":"$6.18000","currency":"USD"},{"qty":10,"price":"$5.55200","currency":"USD"},{"qty":100,"price":"$4.54860","currency":"USD"},{"qty":800,"price":"$3.87211","currency":"USD"},{"qty":1600,"price":"$3.26564","currency":"USD"},{"qty":2400,"price":"$3.10236","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/32531418bfd6dd625151c313fc0c28ac.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SIHB30N60ET1-GE3/alternatives.json"},"ai":{"faq":[{"question":"How does SIHB30N60ET1-GE3 differ from SIHB30N60E-GE3?","answer":"The SIHB30N60ET1-GE3 and SIHB30N60E-GE3 share the same 600 V, 29 A, 125 mOhm N-channel die. Electrically and thermally they are identical — the choice is a production-volume and pick-and-place preference."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/SIHB30N60ET1-GE3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/SIHB30N60ET1-GE3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}