{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SIHA6N65E-GE3","brand":"Vishay","brandSlug":"vishay","productSlug":"SIHA6N65E-GE3","canonicalUrl":"https://icboms.com/vishay/SIHA6N65E-GE3","factsUrl":"https://icboms.com/api/mcp/products/SIHA6N65E-GE3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay E Series SIHA6N65E-GE3 N-Channel MOSFET, 650 Vdss, 7 A continuous drain, 600 mOhm Rds(on), TO-220 Full Pack, Through Hole.","salesMarkdown":"## Device identity and headline ratings The SIHA6N65E-GE3: Housed in a TO-220 Full Pack through-hole package, the fully encapsulated tab isolates the heatsink from the drain potential — a design choice that simplifies mounting without an insulating pad in systems where the heatsink is chassis-grounded. ## Switching and conduction parametrics Total gate charge is 48 nC at Vgs = 10 V; this figure, combined with the input capacitance of 1640 pF at Vds = 100 V, determines the gate-driver current required to achieve the target switching speed. Maximum gate-to-source voltage is ±30 V, providing margin against overshoot on the gate drive in hard-switched topologies. ## Temperature grade and operating environment Maximum power dissipation is 31 W at case temperature Tc — the thermal path through the TO-220 Full Pack tab to a heatsink governs the usable continuous current in a given enclosure.","metaTitle":"Vishay SIHA6N65E-GE3 N-Channel MOSFET, 650V, 7A","metaDescription":"Vishay SIHA6N65E-GE3 N-channel 650V MOSFET, 7A continuous drain, 600mOhm Rds(on). Active production. TO-220 Full Pack. Quoted to order.","metaKeywords":null},"attributes":{"series":"E","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"E","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 3A, 10V","Power Dissipation (Max)":"31W (Tc)","Supplier Device Package":"TO-220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"48 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1640 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.08","priceTiers":[{"qty":1,"price":"$2.08000","currency":"USD"},{"qty":10,"price":"$1.87100","currency":"USD"},{"qty":100,"price":"$1.50420","currency":"USD"},{"qty":500,"price":"$1.23584","currency":"USD"},{"qty":1000,"price":"$1.02399","currency":"USD"},{"qty":2000,"price":"$0.95337","currency":"USD"},{"qty":5000,"price":"$0.92400","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7e8dd8da7f21ec3c3b736adaa453be0e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SIHA6N65E-GE3/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/SIHA6N65E-GE3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/SIHA6N65E-GE3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}