{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SI8273GBD-IS1","brand":"Skyworks Solutions","brandSlug":"skyworks","productSlug":"SI8273GBD-IS1","canonicalUrl":"https://icboms.com/skyworks/SI8273GBD-IS1","factsUrl":"https://icboms.com/api/mcp/products/SI8273GBD-IS1","rawCanonicalId":null},"summary":{"shortDescription":"Skyworks Solutions Si827x digital isolator, 2-channel gate driver, 2500Vrms isolation, 4A peak output, 16-SOIC package, Tube.","salesMarkdown":"## What this isolator does on the board The SI8273GBD-IS1 is a 2-channel digital isolator from Skyworks' Si827x family, purpose-built as an isolated gate driver for power semiconductors. It uses RF coupling technology to transfer the drive signal across a 2500Vrms isolation barrier, so the low-voltage controller side stays galvanically separated from the high-side gate drive. With a 4A peak output current and a 4.2V to 30V output supply range, it drives the gate of a MOSFET, IGBT, or SiC device directly — no external booster stage needed for most medium-power half-bridge and full-bridge topologies. ## Isolation and transient immunity — the real-world limits The 2500Vrms isolation rating is the basic insulation level for reinforced isolation in mains-connected equipment. What matters more in a switching power stage is the common-mode transient immunity: 200kV/µs minimum means the output does not glitch when the switching node slews at 100 V/ns — a realistic edge rate in a 600V GaN or SiC half-bridge. Propagation delay is matched at 75ns max for both rising and falling edges, with pulse-width distortion held to 8ns max. This symmetry keeps the dead-time budget predictable: if the controller inserts 100ns of dead time, the isolator adds at most 8ns of skew, so the designer does not have to pad the dead time by an extra 75ns to cover mismatch. The rise and fall times — 10.5ns and 13.3ns typical — are fast enough to minimise switching loss in the power FET, but the 4A peak source and 4A peak sink current (1.8A high, 4A low) determine how quickly the gate capacitance charges. For a 10nC gate charge, the rise time into the gate is roughly 2.5ns with the full 4A, so the external gate resistor sets the actual slew rate, not the isolator. ## Package, approvals, and production status Housed in a 16-SOIC narrow-body package (3.90mm width), the SI8273GBD-IS1 is a surface-mount part supplied in tube format. The supplier device package is 16-SOIC, matching the standard SOIC-16 footprint for reflow assembly. Safety approvals include CQC, CSA, UR, and VDE — the VDE mark confirms reinforced insulation per IEC 60747-17, which is required for mains-isolated gate drives in European-market power supplies and motor drives. The 125°C upper limit is the junction temperature, so the ambient derating depends on the power dissipation in the output stage — at 4A peak into a 10nF gate load at 500kHz, the self-heating is about 0.5°C, negligible for most layouts.","metaTitle":"SI8273GBD-IS1 Skyworks Digital Isolator, 2.5kV","metaDescription":"Skyworks SI8273GBD-IS1 digital isolator, 2-channel gate driver with 2500Vrms isolation, 4A peak output, 200kV/µs CMTI. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"Si827x","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Digital Isolators"],"specifications":{"Series":"Si827x","Package":"Tube","Technology":"RF Coupling","Mounting Type":"Surface Mount","Package / Case":"16-SOIC (0.154\\\", 3.90mm Width)","Approval Agency":"CQC, CSA, UR, VDE","lifecycle_stage":"eol_hot","Number of Channels":"2","Voltage - Isolation":"2500Vrms","Current - Peak Output":"4A","Operating Temperature":"-40°C ~ 125°C","Rise / Fall Time (Typ)":"10.5ns, 13.3ns","Supplier Device Package":"16-SOIC","Voltage - Output Supply":"4.2V ~ 30V","Current - Output High, Low":"1.8A, 4A","Pulse Width Distortion (Max)":"8ns","Propagation Delay tpLH / tpHL (Max)":"75ns, 75ns","Common Mode Transient Immunity (Min)":"200kV/µs"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.27","stockQuantity":18,"priceTiers":[{"qty":1,"price":"$5.27000","currency":"USD"},{"qty":10,"price":"$4.73500","currency":"USD"},{"qty":25,"price":"$4.47680","currency":"USD"},{"qty":100,"price":"$3.87990","currency":"USD"},{"qty":250,"price":"$3.68096","currency":"USD"},{"qty":500,"price":"$3.30290","currency":"USD"},{"qty":1000,"price":"$2.78558","currency":"USD"},{"qty":2500,"price":"$2.64630","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e34d268c600f08b08b448c238613347c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source for the SI8273GBD-IS1?","answer":"The SI8273GB-IS1 is a pin-compatible peer in the same Si827x family with identical 4A peak output and 2500Vrms isolation. The main difference is common-mode transient immunity: 200kV/µs on the GBD variant versus 150kV/µs on the GB variant. Both share the same 16-SOIC package, 2-channel count, and 4.2V-30V output supply range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/skyworks/SI8273GBD-IS1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/skyworks/SI8273GBD-IS1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}