{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SI4435DYTRPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SI4435DYTRPBF","canonicalUrl":"https://icboms.com/infineon/SI4435DYTRPBF","factsUrl":"https://icboms.com/api/mcp/products/SI4435DYTRPBF","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IR HEXFET® series SI4435DYTRPBF, P-Channel MOSFET, 30 V Vdss, 8 A continuous drain, 20 mOhm Rds(on) at 10 V, 60 nC gate charge, -55 to 150 °C, 8-SOIC surface mount.","salesMarkdown":"## P-channel load switch for 24 V rails The SI4435DYTRPBF: The 8-SO package fits standard surface-mount assembly lines. ## Rds(on) and gate drive — what the numbers mean Rds(on) is specified at 20 mOhm max with 8 A drain current and 10 V gate drive. Gate charge is 60 nC at 10 V. Input capacitance Ciss is 2320 pF at 15 V drain bias. ## Temperature range and environment Power dissipation is limited to 2.5 W at 25 °C ambient in the 8-SO package — a copper pour on the PCB landing pad is recommended to keep the junction below the derated limit at high load currents. ## Sourcing and compliance It is ROHS3 compliant.","metaTitle":"SI4435DYTRPBF P-Channel MOSFET, 30V 8A 20mOhm, 8-SOIC","metaDescription":"Infineon IR SI4435DYTRPBF P-Channel HEXFET MOSFET, 30V Vdss, 8A Id, 20mOhm Rds(on) at 10V. -55 to 150°C, 8-SOIC. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Base Product Number":"SI4435","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"20mOhm @ 8A, 10V","Power Dissipation (Max)":"2.5W (Ta)","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2320 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.9900","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.12000","currency":"USD"},{"qty":10,"price":"$1.00400","currency":"USD"},{"qty":100,"price":"$0.78290","currency":"USD"},{"qty":500,"price":"$0.64676","currency":"USD"},{"qty":1000,"price":"$0.51060","currency":"USD"},{"qty":2000,"price":"$0.47656","currency":"USD"},{"qty":4000,"price":"$0.47656","currency":"USD"},{"qty":8000,"price":"$0.45273","currency":"USD"},{"qty":12000,"price":"$0.44400","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2f037eadc609af8671fc9772ba1c8108.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the SI4435DYTRPBF?","answer":"The maximum Rds(on) is 20 mOhm at 8 A drain current with 10 V gate drive."},{"question":"Is the SI4435DYTRPBF lead-free?","answer":"Yes, the part is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SI4435DYTRPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SI4435DYTRPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}