{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SI4420DYPBF","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SI4420DYPBF","canonicalUrl":"https://icboms.com/infineon/SI4420DYPBF","factsUrl":"https://icboms.com/api/mcp/products/SI4420DYPBF","rawCanonicalId":null},"summary":{"shortDescription":"Vishay / Siliconix SI4420DYPBF, HEXFET® Series, N-Channel MOSFET, 30V Drain-Source, 12.5A Continuous Drain, 9mOhm Rds(on) at 10V, 8-SOIC Package, Tube.","salesMarkdown":"## 30V N-channel HEXFET with 9mOhm on-resistance The SI4420DYPBF: The 9mOhm maximum Rds(on) at 10V gate drive makes it a strong fit for low-voltage load switching, DC-DC converter synchronous rectification, and battery protection circuits where conduction loss matters. No official successor or last-time-buy date is recorded in the available records, so the only channel is surplus or broker inventory. The 78nC gate charge at 10V and 2240pF input capacitance at 15V drain-source define the switching speed budget. For a 100-200kHz hard-switched converter, the gate driver needs to source and sink enough peak current to keep switching losses under control. The 4.5V minimum drive voltage allows logic-level gate drive from a 5V rail, but the 9mOhm Rds(on) is specified at 10V — expect roughly double the resistance at 4.5V, so the thermal margin narrows if you run at reduced gate voltage.","metaTitle":"SI4420DYPBF N-Channel MOSFET, 30V, 9mOhm, Obsolete","metaDescription":"SI4420DYPBF HEXFET N-channel MOSFET, 30V, 12.5A, 9mOhm Rds(on), 8-SOIC.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"HEXFET®","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"9mOhm @ 12.5A, 10V","Power Dissipation (Max)":"2.5W (Ta)","Supplier Device Package":"8-SO","Gate Charge (Qg) (Max) @ Vgs":"78 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2240 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"12.5A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.9000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0b75c1867a323afc31225ca082cfd402.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for SI4420DYPBF?","answer":"No official replacement is documented. For a new design, look at current-production 30V N-channel MOSFETs in the SOIC-8 package with similar Rds(on) and gate charge — Vishay's own SiR series or Infineon's OptiMOS line are common cross-shop candidates, but verify pin compatibility and thermal performance from the respective datasheets."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SI4420DYPBF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SI4420DYPBF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}