{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SDT05S60XK","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SDT05S60XK","canonicalUrl":"https://icboms.com/infineon/SDT05S60XK","factsUrl":"https://icboms.com/api/mcp/products/SDT05S60XK","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SDT05S60XK Silicon Carbide Schottky Diode, 600 V DC Reverse Voltage, 5 A Average Rectified Current, Zero Reverse Recovery Time (trr=0 ns), 1.7 V Forward Voltage at 5 A, -55 to 175 °C Junction, PG-TO220-2 Through-Hole Package.","salesMarkdown":"## SiC Schottky — zero recovery loss in the PFC boost stage The SDT05S60XK: Its defining characteristic is a reverse recovery time of 0 ns — there is no stored charge to sweep out when the diode commutates, so the switching loss contribution from reverse recovery is eliminated entirely. In a PFC boost stage, this part replaces a silicon ultrafast diode and cuts diode-related switching loss. ## Forward voltage and junction temperature — thermal design anchors Forward voltage is specified at 1.7 V maximum at 5 A, 25 °C junction. That 8.5 W conduction loss at full rated current sets the thermal budget: with a junction-to-case thermal resistance typical of a TO-220, the designer needs a heatsink sized to keep Tj below 175 °C. The 170 pF capacitance at 1 V reverse bias keeps capacitive switching losses manageable at high frequencies. ## Package and mounting — through-hole with a tab cathode Housed in a PG-TO220-2, this is a two-lead through-hole package with the metal tab forming the cathode connection. The tab must be electrically isolated from the heatsink or tied to the output rail, depending on the topology. The through-hole body is straightforward to hand-solder and rework, which matters for prototype builds and low-to-medium volume production.","metaTitle":"Infineon SDT05S60XK SiC Schottky Diode, 600V 5A, TO-220-2","metaDescription":"Infineon SDT05S60XK silicon carbide Schottky diode, 600V reverse, 5A average, zero reverse recovery time (trr=0ns). TO-220-2 package, -55 to 175°C junction.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Speed":"No Recovery Time > 500mA (Io)","Package":"Bulk","Diode Type":"Silicon Carbide Schottky","Mounting Type":"Through Hole","Package / Case":"TO-220-2","lifecycle_stage":"eol_hot","Capacitance @ Vr, F":"170pF @ 1V, 1MHz","Supplier Device Package":"PG-TO220-2","Reverse Recovery Time (trr)":"0 ns","Current - Reverse Leakage @ Vr":"200 µA @ 600 V","Voltage - DC Reverse (Vr) (Max)":"600 V","Current - Average Rectified (Io)":"5A","Operating Temperature - Junction":"-55°C ~ 175°C","Voltage - Forward (Vf) (Max) @ If":"1.7 V @ 5 A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.18","stockQuantity":0,"priceTiers":[{"qty":138,"price":"$2.18000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1e35ea314bc5c6aa8d4e1a7070b7a8e3.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the reverse recovery time of SDT05S60XK?","answer":"The reverse recovery time is 0 ns. As a silicon carbide Schottky diode, it has no minority carrier storage, so there is no reverse recovery charge to extract. This eliminates the switching loss component that a standard silicon diode would contribute."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SDT05S60XK","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SDT05S60XK when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}