{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SCTWA30N120","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"SCTWA30N120","canonicalUrl":"https://icboms.com/stmicroelectronics/SCTWA30N120","factsUrl":"https://icboms.com/api/mcp/products/SCTWA30N120","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SCTWA30N120 SiCFET, N-Channel, 1200 V drain-source, 100 mOhm Rds(on) at 20 A, 45 A continuous, 105 nC gate charge, TO-247-3 through-hole, -55 to 200 °C junction.","salesMarkdown":"The STMicroelectronics SCTWA30N120 is a 1200 V N-channel silicon-carbide power MOSFET in a TO-247-3 through-hole package. It is designed for high-efficiency switching in applications such as solar inverters, EV charging, and industrial power supplies where the 1200 V drain-source rating gives headroom on a 600–800 V DC bus. The 100 mOhm on-resistance at 20 A and 20 V gate drive sets the conduction loss floor — at 20 A the dissipation is 40 W, which the 270 W package power rating can handle with adequate heatsinking. Gate charge of 105 nC at 20 V is moderate for a 1200 V SiC part; a gate driver delivering 2 A peak can switch it in under 100 ns, keeping switching losses manageable at frequencies up to 100 kHz. ## Junction temperature range and package — design-in checklist The -55°C to 200°C junction temperature range qualifies the SCTWA30N120 for high-reliability environments — avionics, downhole drilling, and outdoor telecom where the ambient can exceed 85°C and the junction sees repetitive thermal cycling. Input capacitance is 1700 pF at 400 V drain-source — this is the Ciss the driver sees; the low value relative to the current rating means the driver's peak current requirement stays moderate, but the gate loop inductance must be kept under 10 nH to avoid ringing.","metaTitle":"STMicro SCTWA30N120 SiC MOSFET, 1200 V, 100 mOhm, TO-247-3","metaDescription":"SCTWA30N120 SiC N-channel MOSFET: 1200 Vdss, 100 mOhm Rds(on) at 20 A, 45 A continuous, TO-247-3. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+25V, -10V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 1mA (Typ)","Operating Temperature":"-55°C ~ 200°C (TJ)","Rds On (Max) @ Id, Vgs":"100mOhm @ 20A, 20V","Power Dissipation (Max)":"270W (Tc)","Supplier Device Package":"HiP247™ Long Leads","Gate Charge (Qg) (Max) @ Vgs":"105 nC @ 20 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"1700 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"20V","Current - Continuous Drain (Id) @ 25°C":"45A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$41.71764","priceTiers":[{"qty":1,"price":"$41.71764","currency":"USD"},{"qty":30,"price":"$39.78552","currency":"USD"},{"qty":90,"price":"$39.30192","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e1358bf1547b7d22ad49d3f796144666.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SCTWA30N120/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of SCTWA30N120?","answer":"The on-resistance is 100 mOhm maximum at 20 A drain current and 20 V gate drive. This is the value to use for conduction-loss calculations at rated current."},{"question":"What is the typical gate charge of SCTWA30N120?","answer":"The gate charge is 105 nC at 20 V gate drive. This total Qg determines the gate-driver power and switching speed — a 2 A driver can switch it in under 100 ns."},{"question":"What is the closest pin-compatible alternative to SCTWA30N120?","answer":"The TO-247-3 SiC MOSFET market includes parts from Wolfspeed and Rohm, but pin-compatibility must be verified against the specific gate-drive and mounting-hole layout."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/SCTWA30N120","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/SCTWA30N120 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-09-28T15:04:15.359Z","lastPublished":"2026-09-28T15:04:15.359Z","indexable":true}}