{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SCT50N120","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"SCT50N120","canonicalUrl":"https://icboms.com/stmicroelectronics/SCT50N120","factsUrl":"https://icboms.com/api/mcp/products/SCT50N120","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SCT50N120 SiCFET, N-Channel, 1200V, 65A, 69mOhm, TO-247-3, Tube.","salesMarkdown":"## 1200V SiC MOSFET in TO-247-3 The SCT50N120: It comes in a through-hole TO-247-3 package, shipped in tube format. With a maximum Rds(on) of 69 mOhm at 40 A and 20 V gate drive, and a total gate charge of 122 nC at 20 V, this part is built for high-efficiency switching in hard-switching topologies like boost converters, LLC resonant converters, and three-phase inverter stages. The wide operating junction temperature range from -55°C to 200°C suits it for demanding environments such as EV traction inverters, solar string inverters, and industrial motor drives where silicon carbide's lower switching losses and higher temperature capability matter. ## Parametric deep-dive Gate threshold voltage is 3 V maximum at 1 mA drain current, and the recommended drive voltage for minimum on-resistance is 20 V. Input capacitance (Ciss) is 1900 pF typical at 400 V drain-source, which together with the 122 nC gate charge defines the switching speed and driver requirements. Maximum power dissipation is 318 W at case temperature, and the device is rated for a gate-source voltage range of +25 V to -10 V, giving good margin against gate overvoltage transients in half-bridge configurations.","metaTitle":"STMicroelectronics SCT50N120 SiCFET, 1200V 65A N-Channel","metaDescription":"ST SCT50N120 SiCFET N-Channel 1200V 65A, 69mOhm Rds(on), TO-247-3. Active production, ROHS3 compliant. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+25V, -10V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3V @ 1mA","Operating Temperature":"-55°C ~ 200°C (TJ)","Rds On (Max) @ Id, Vgs":"69mOhm @ 40A, 20V","Power Dissipation (Max)":"318W (Tc)","Supplier Device Package":"HiP247™","Gate Charge (Qg) (Max) @ Vgs":"122 nC @ 20 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"1900 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"20V","Current - Continuous Drain (Id) @ 25°C":"65A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$40.1","priceTiers":[{"qty":1,"price":"$40.10000","currency":"USD"},{"qty":10,"price":"$36.98500","currency":"USD"},{"qty":100,"price":"$34.30350","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4a42ad107531b757c21faf7011831492.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SCT50N120/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy SCT50N120 and how do I get a price?","answer":"Submit a request for quote to confirm current availability and pricing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/SCT50N120","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/SCT50N120 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}