{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SCT3060ARC14","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"SCT3060ARC14","canonicalUrl":"https://icboms.com/rohm/SCT3060ARC14","factsUrl":"https://icboms.com/api/mcp/products/SCT3060ARC14","rawCanonicalId":null},"summary":{"shortDescription":"ROHM Semiconductor SCT3060ARC14 SiCFET, N-channel, 650 V drain-source, 39 A continuous drain, 78 mOhm Rds(on) at 18 V, TO-247-4L through-hole package, tube.","salesMarkdown":"## Package and board-fit — TO-247-4 with Kelvin source The SCT3060ARC14 ships in a TO-247-4L through-hole package. The fourth pin is a Kelvin source connection that isolates the gate-drive return from the power current path — this reduces the common-source inductance in the gate loop, so the device switches cleanly without the gate-voltage ringing that plagues three-pin TO-247 parts at high di/dt. ## What the headline ratings mean for the switching stage The 78 mOhm max on-resistance at 13 A, 18 V gate drive sets the conduction loss — at 13 A the dissipation is roughly 13 W, well within the 165 W power-dissipation ceiling when the case is properly heatsunk. Gate charge is 58 nC at 18 V. A gate driver delivering 2 A can switch this FET in about 30 ns, which keeps switching losses low at frequencies up to 100 kHz. Input capacitance is 852 pF at 500 V — low for a 650 V SiC device, so the driver sees a lighter capacitive load than comparable Si MOSFETs.","metaTitle":"ROHM SCT3060ARC14 SiCFET, 650 V, 39 A, TO-247-4","metaDescription":"Active N-channel SiCFET from ROHM, 650 Vdss, 39 A Id, 78 mOhm Rds(on) at 18 V gate drive. TO-247-4L package with Kelvin source. ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+22V, -4V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.6V @ 6.67mA","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"78mOhm @ 13A, 18V","Power Dissipation (Max)":"165W","Supplier Device Package":"TO-247-4L","Gate Charge (Qg) (Max) @ Vgs":"58 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"852 pF @ 500 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"39A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$23.34","stockQuantity":23,"priceTiers":[{"qty":1,"price":"$23.34000","currency":"USD"},{"qty":10,"price":"$20.74200","currency":"USD"},{"qty":100,"price":"$18.14210","currency":"USD"},{"qty":500,"price":"$15.48128","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8b5d1f627f6f7b8e9dc81a9c78635370.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source — SCT3080KRC15?","answer":"The SCT3080KRC15 is a 1200 V SiCFET in the same TO-247-4L package, with 104 mOhm Rds(on) at 10 A, 18 V and 60 nC gate charge. It will not drop into a 650 V design without rewiring because the drain-source voltage rating is higher, but the pinout and gate-drive voltage are the same. For a 650 V bus, the SCT3060ARC14 is the correct voltage-class part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/SCT3060ARC14","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/SCT3060ARC14 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}