{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SCT3030KLGC11","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"SCT3030KLGC11","canonicalUrl":"https://icboms.com/rohm/SCT3030KLGC11","factsUrl":"https://icboms.com/api/mcp/products/SCT3030KLGC11","rawCanonicalId":null},"summary":{"shortDescription":"ROHM Semiconductor SCT3030KLGC11 N-channel SiC power MOSFET, 1200 V, 72 A, 39 mOhm Rds(on), TO-247N through-hole, tube.","salesMarkdown":"## SiC power FET for high-voltage, high-efficiency switching The SCT3030KLGC11 is a 1200 V, 72 A N-channel silicon-carbide power MOSFET from ROHM Semiconductor in the TO-247N through-hole package. It is designed for hard-switching topologies where low conduction and switching losses matter — think totem-pole PFC, bidirectional DC-DC converters, and high-voltage auxiliary supplies that need to run cool at high frequency. The 39 mOhm typical Rds(on) at 27 A and 18 V gate drive is specified at the operating point you will actually use, not a cherry-picked low-current number. At 72 A the conduction loss is I²R, so the die temperature rise at full load is manageable with a heatsink sized for the 339 W power dissipation ceiling. Gate charge is 131 nC at 18 V — that is moderate for a 72 A SiC part. The driver must source and sink that charge fast enough to keep the switching edges clean; a 10-15 Ohm gate resistor is a typical starting point to damp the ringing without slowing the transition too much. ## Gate drive limits and temperature margin The gate-source voltage range is +22 V to -4 V. SiC FETs tolerate a higher positive gate drive than silicon MOSFETs, but the -4 V negative rail is tighter than the -20 V common on silicon parts — the gate driver must not overshoot below -4 V during the off-state ringing. Threshold voltage is 5.6 V at 13.3 mA drain current. That is a relatively high Vgs(th) for a SiC device, which means the gate driver must swing well above 5.6 V to fully enhance the channel. The 18 V used for the Rds(on) and Qg specs is the recommended drive level. SiC's wide bandgap holds leakage low at high temperature, so the 175°C rating is usable — but the 339 W dissipation at Tc=25°C derates with case temperature per the datasheet curve. A thermal design that keeps Tj below 150°C in steady state leaves headroom for fault transients. The TO-247N through-hole package is a standard power-semiconductor footprint. The tube packaging is suitable for manual insertion or selective soldering; no moisture sensitivity level concern for a non-surface-mount package.","metaTitle":"SCT3030KLGC11 ROHM SiC N-Ch FET, 1200V 72A TO-247N","metaDescription":"SCT3030KLGC11 N-channel SiC power FET, 1200V 72A, 39mOhm Rds(on), TO-247N. Active production. Quoted to order against BOM. Request RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"+22 V, -4 V","has_mpn":"SCT3030","power_w":"339.0","Fet Type":"N-Channel","package_type":"Tube","mounting_type":"Through Hole","capacitance_uf":"0.0022","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"1200.0","Vgs(Th) (Max) @ Id":"5.6 V @ 13.3mA","switching_current_a":"72.0","Rds On (Max) @ Id, Vgs":"39mOhm @ 27 A, 18 V","Operating Temperature High":"175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"131 nC @ 18 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$69.43","stockQuantity":19,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ade7fa7ebbea9cfbce446d8da63281b2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) and gate charge for this SiC FET?","answer":"Maximum Rds(on) is 39 mOhm at 27 A drain current with 18 V gate drive. Total gate charge at 18 V is 131 nC."},{"question":"What compliance documentation does ROHM provide for SCT3030KLGC11?","answer":"The part is listed as active by ROHM Semiconductor. Standard compliance documentation (RoHS, REACH) is provided by the manufacturer; specific certificates are available on request at the time of RFQ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/SCT3030KLGC11","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/SCT3030KLGC11 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}