{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SCT3017ALHRC11","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"SCT3017ALHRC11","canonicalUrl":"https://icboms.com/rohm/SCT3017ALHRC11","factsUrl":"https://icboms.com/api/mcp/products/SCT3017ALHRC11","rawCanonicalId":null},"summary":{"shortDescription":"ROHM Semiconductor SCT3017ALHRC11 SiC N-channel power MOSFET, 650 V, 118 A, 22.1 mOhm Rds(on), TO-247N through-hole package, AEC-Q101 automotive qualified.","salesMarkdown":"## Active production — AEC-Q101 SiC power FET for traction and PFC Qualified to AEC-Q101, the SCT3017ALHRC11 is certified for automotive-grade reliability stress and temperature cycling — the standard for under-hood and chassis-domain power stages in traction inverters, DC-DC converters, and on-board chargers. ## On-resistance and gate charge — motor-drive conduction and switching budget Maximum on-resistance is 22.1 mOhm at 47 A drain current with 18 V gate drive. This is the conduction-loss figure to use in thermal calculations for a motor-drive output stage or PFC boost: at 47 A the resistive loss per device is roughly 49 W, which combined with the 427 W power dissipation ceiling tells you the heatsink and airflow required to keep junction temperature below the 175 °C absolute maximum. Total gate charge is 172 nC at Vgs = 18 V. For a switching frequency of 20 kHz in a traction inverter, the gate-driver must supply roughly 3.4 mA average current just to charge and discharge the gate capacitance — plus the driver's own quiescent draw. The 172 nC figure also sets the crossover time in the miller plateau; a driver with insufficient peak current extends the switching interval and raises turn-on and turn-off losses. Gate-source voltage is rated +22 V / -4 V absolute maximum. The asymmetric negative rail means the gate-drive supply should clamp below -4 V to avoid oxide stress during the off-state, particularly in half-bridge topologies where the low-side FET sees a negative Vgs spike during the high-side turn-on transient. ## Threshold voltage and temperature margin Maximum threshold voltage is 5.6 V at 23.5 mA drain current. With a typical gate-drive voltage of 15-18 V, the gate overdrive is roughly 10-12 V above Vgs(th), keeping the FET in the ohmic region across the full load range.","metaTitle":"ROHM SCT3017ALHRC11 SiC N-Channel FET, 650V 118A TO-247N","metaDescription":"Active-production ROHM SCT3017ALHRC11 SiC MOSFET, 650V 118A, 22.1mOhm Rds(on), AEC-Q101 automotive grade. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"+22 V, -4 V","series":"Automotive, AEC-Q101","has_mpn":"SCT3017","power_w":"427.0","Fet Type":"N-Channel","package_type":"Tube","mounting_type":"Through Hole","capacitance_uf":"0.0029","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"650.0","Vgs(Th) (Max) @ Id":"5.6 V @ 23.5mA","switching_current_a":"118.0","Rds On (Max) @ Id, Vgs":"22.1mOhm @ 47 A, 18 V","Operating Temperature High":"175°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"172 nC @ 18 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$119.39","stockQuantity":31,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/32bc0ad1f1dd87ef43b94c3b72c88ece.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/SCT3017ALHRC11","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/SCT3017ALHRC11 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}