{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SCT20N120","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"SCT20N120","canonicalUrl":"https://icboms.com/stmicroelectronics/SCT20N120","factsUrl":"https://icboms.com/api/mcp/products/SCT20N120","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SCT20N120 N-channel SiCFET, 1200 V Vdss, 20 A continuous drain, 290 mOhm Rds(on) at 10 A, TO-247-3 through-hole package, -55°C to 200°C junction temperature.","salesMarkdown":"## What the 1200 V / 20 A rating means for your power stage That 1200 V blocking voltage puts it squarely in high-voltage power conversion — think 800 V bus architectures in solar inverters, EV onboard chargers, and industrial motor drives where a 600 V MOSFET leaves no margin for switching transients. The 20 A continuous rating is at Tc=25°C; real-world derating follows the thermal curve, so a heatsink sized to keep the case below 100°C still delivers about 14 A usable. With a maximum on-resistance of 290 mOhm at 10 A and 20 V gate drive, the SCT20N120 presents a conduction loss of about 2.9 W at that current — manageable with a modest heatsink. The total gate charge of 45 nC at 20 V means the gate driver only needs to source about 90 nC per switching cycle, keeping the drive loss low even at 50-100 kHz. Compare that to a similarly-rated superjunction MOSFET in the same TO-247 package: the SiC part typically halves the gate charge for the same Rds(on), which translates to lower driver losses and faster turn-on. The input capacitance of 650 pF at 400 V Vds is about a third of what an equivalent 600 V superjunction part would show, so the switching node rings less — you can often skip the snubber on the first prototype. ## Thermal budget and package reality The TO-247-3 package (ST calls it HiP247™) is a through-hole, isolated-tab design — the metal tab is the drain, so you need an insulating pad and a thermal interface material if the heatsink is at chassis ground. Maximum power dissipation is 175 W at Tc=25°C, but that's the theoretical ceiling; in practice, a 40°C/W heatsink with forced air keeps the junction below 125°C at 3 A continuous. The 200°C Tj max is the absolute limit — stay below 175°C for long-term reliability, as the SiC body diode's reverse recovery degrades above that. The ROHS3 compliance covers the EU directive for lead-free soldering.","metaTitle":"STMicroelectronics SCT20N120 SiCFET, 1200 V 20 A TO-247-3","metaDescription":"SCT20N120 N-channel SiCFET from STMicroelectronics: 1200 V Vdss, 20 A Id, 290 mOhm Rds(on), TO-247-3. Active product.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+25V, -10V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 1mA","Operating Temperature":"-55°C ~ 200°C (TJ)","Rds On (Max) @ Id, Vgs":"290mOhm @ 10A, 20V","Power Dissipation (Max)":"175W (Tc)","Supplier Device Package":"HiP247™","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 20 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"650 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"20V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$17.24","priceTiers":[{"qty":1,"price":"$17.24000","currency":"USD"},{"qty":10,"price":"$15.84300","currency":"USD"},{"qty":100,"price":"$13.55200","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f0bda97913457e84847d0f9f81daf332.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SCT20N120/alternatives.json"},"ai":{"faq":[{"question":"Can I use SCT20N120 in a 1200 V application?","answer":"Yes — the drain-source breakdown voltage (Vdss) is rated at 1200 V, so it can block 1200 V in the off-state. For a 1200 V bus, derate by at least 20% for switching transients; a practical maximum DC link voltage is around 960 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/SCT20N120","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/SCT20N120 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}