{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"S29GL512T11TFV010","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"S29GL512T11TFV010","canonicalUrl":"https://icboms.com/infineon/S29GL512T11TFV010","factsUrl":"https://icboms.com/api/mcp/products/S29GL512T11TFV010","rawCanonicalId":null},"summary":{"shortDescription":"Cypress GL-T series S29GL512T11TFV010, 512 Mbit parallel NOR Flash, 110 ns access time, 2.7 V supply, 64M x 8 organization, -40°C to 105°C, 56-pin TSOP.","salesMarkdown":"## 512 Mbit parallel NOR Flash for code-execution and high-reliability storage The Cypress S29GL512T11TFV010 is a 512 Mbit parallel NOR Flash memory from the GL-T series, organized as 64M x 8. The parallel interface provides deterministic bus timing for microcontrollers and FPGAs that need fast boot or real-time instruction fetch without the overhead of a serial protocol. For a host controller running at 8 MHz (125 ns cycle), this leaves about 15 ns of setup margin — tight but workable with matched trace lengths. If the controller runs faster than 10 MHz, you'll need to insert wait states or switch to a page-mode / burst-mode part. The 60 ns write cycle time for word and page operations is separate; it governs the program pulse width, not the read path. ## Industrial temperature range and deployment context The 105°C ceiling covers most sealed enclosures with passive cooling; above that junction temperature, the 110 ns access time may degrade, so budget margin if the ambient exceeds 95°C. Cypress (now Infineon) continues to manufacture the GL-T series, so there is no last-time-buy horizon to plan around. The 56-pin TSOP footprint is standard across the GL-T density range, making a drop-in migration to a higher or lower density possible without a board spin.","metaTitle":"S29GL512T11TFV010 Cypress GL-T 512 Mbit Parallel NOR Flash","metaDescription":"Cypress S29GL512T11TFV010 512 Mbit parallel NOR Flash, 110 ns access, -40°C to 105°C, 2.7 V supply, 64M x 8 organization. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"series":"GL-T","has_mpn":"S29GL512","frame_size":"512Mbit","Access Time":"110 ns","memory_type":"Non-Volatile","package_type":"Tray","Memory Format":"FLASH","mounting_type":"Surface Mount","interface_type":"Parallel","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"2.7","Memory Organization":"64M x 8","Operating Temperature High":"-40°C to 105°C (TA)","Write Cycle Time - Word, Page":"60ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.20","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8db3de636dc4a0dbc691e347f90e6152.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is S29GL512T11TFV010 the same as S29GL512T10TFV010?","answer":"No — the T11 and T10 suffixes denote different speed grades. The T11 has a 110 ns access time; the T10 is faster (100 ns). Otherwise they share the same 512 Mbit density, 2.7 V supply, and 56-pin TSOP package. Verify the access time your controller requires before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/S29GL512T11TFV010","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/S29GL512T11TFV010 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}