{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"S29GL256P11FAI010","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"S29GL256P11FAI010","canonicalUrl":"https://icboms.com/infineon/S29GL256P11FAI010","factsUrl":"https://icboms.com/api/mcp/products/S29GL256P11FAI010","rawCanonicalId":null},"summary":{"shortDescription":"Infineon/Cypress GL-P series S29GL256P11FAI010, 256Mbit Parallel NOR Flash, 110 ns access time, 2.7 V supply, 16M x 16 organization, 64-FBGA, -40°C to 85°C.","salesMarkdown":"## 256 Mbit parallel NOR Flash for industrial code storage The Infineon S29GL256P11FAI010 is a 256 Mbit parallel NOR Flash from the GL-P series, organized as 16M x 16 bits. It uses a CFI (Common Flash Interface) for parameter identification, which simplifies driver portability across density variants. With a 110 ns random access time and a 2.7 V supply, this part is sized for single-rail 3.3 V embedded systems that need fast read for code shadowing or XIP (eXecute In Place) in industrial controllers, networking gear, and telecom line cards. For a 16-bit wide bus, this delivers about 18 MB/s sequential read throughput. That is fast enough for boot code and moderate-speed data logging, but if your design needs back-to-back burst reads at higher clock rates, you may want to budget wait states or look at a page-mode variant. The 110 ns write cycle time (word or page) also applies, so page programming can reduce per-byte write time when updating firmware blocks. The 64-ball FBGA package is a fine-pitch BGA (0.8 mm ball pitch typical for this family) — plan for controlled impedance routing and a solder mask defined pad. No exposed thermal pad; dissipation is through the BGA balls and PCB copper.","metaTitle":"S29GL256P11FAI010 256Mbit Parallel NOR Flash, 110 ns Access","metaDescription":"Infineon/Cypress S29GL256P11FAI010 GL-P series 256Mbit NOR Flash, 110 ns access, 2.7 V, 64-FBGA, -40°C to 85°C. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"series":"GL-P","has_mpn":"S29GL256","frame_size":"256Mbit","Access Time":"110 ns","memory_type":"Non-Volatile","package_type":"Tray","Memory Format":"FLASH","mounting_type":"Surface Mount","interface_type":"CFI","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"2.7","Memory Organization":"16M x 16","Operating Temperature High":"-40°C to 85°C (TA)","Write Cycle Time - Word, Page":"110ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$13.33","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/60537ac7de86f66c5a38a620f0facea1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent for S29GL256P11FAI010?","answer":"The S29GL512T11TFIV20 is a higher-density (512 Mbit) sibling in the GL-T series with a 1.65 V supply and 60 ns write cycle, but it is not a direct pin-compatible drop-in due to different supply voltage and organization. For a closer functional equivalent at the same density, consider the S29GL128S10TFIV13 (128 Mbit, 100 ns, 1.65 V) — again, check the supply and timing differences before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/S29GL256P11FAI010","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/S29GL256P11FAI010 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}