{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RX3R05BBHC16","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"RX3R05BBHC16","canonicalUrl":"https://icboms.com/rohm/RX3R05BBHC16","factsUrl":"https://icboms.com/api/mcp/products/RX3R05BBHC16","rawCanonicalId":null},"summary":{"shortDescription":"ROHM Semiconductor RX3R05BBHC16 N-Channel MOSFET, 150 Vdss, 50 A continuous drain, 29 mOhm Rds(on), TO-220AB, Tube.","salesMarkdown":"## Power switching for 150 V rails The RX3R05BBHC16: With a maximum Rds(on) of 29 mOhm at 25 A and 10 V gate drive, it suits high-efficiency switching in DC-DC converters, motor drives, and battery management circuits operating off 48 V to 72 V buses where the 150 V breakdown gives headroom for transients. ## Gate drive and switching loss Total gate charge is 37 nC at 10 V, and the input capacitance measures 2150 pF at 75 V Vds. These numbers tell you the driver current needed for a given switching frequency — at 100 kHz, the average gate drive current is about 3.7 mA, well within a standard gate driver's capability. The threshold voltage is 4 V max at 1 mA, so a 10 V gate drive ensures the FET is fully enhanced with margin. ## Thermal and package fit Maximum power dissipation is 89 W at case temperature, and the junction temperature limit is 150°C. The TO-220AB (TO-220-3) through-hole package mounts into a standard 0.100-inch pitch footprint on a heatsink — the tab is the drain. For a 50 A continuous application, the Rds(on) at 150°C junction will roughly double from the 25°C value, so budget the conduction loss at the hot junction, not the datasheet 25°C figure.","metaTitle":"ROHM RX3R05BBHC16 N-Channel MOSFET, 150 V, 50 A, TO-220","metaDescription":"ROHM RX3R05BBHC16 N-Channel MOSFET, 150 Vdss, 50 A continuous drain, 29 mOhm Rds(on) at 10 V. Active production. TO-220AB package. Quoted to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"29mOhm @ 25A, 10V","Power Dissipation (Max)":"89W (Tc)","Supplier Device Package":"TO-220AB","Gate Charge (Qg) (Max) @ Vgs":"37 nC @ 10 V","Drain to Source Voltage (Vdss)":"150 V","Input Capacitance (Ciss) (Max) @ Vds":"2150 pF @ 75 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.82","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.82000","currency":"USD"},{"qty":10,"price":"$3.20900","currency":"USD"},{"qty":100,"price":"$2.59610","currency":"USD"},{"qty":500,"price":"$2.30764","currency":"USD"},{"qty":1000,"price":"$1.97592","currency":"USD"},{"qty":2000,"price":"$1.86054","currency":"USD"},{"qty":5000,"price":"$1.78500","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f4ef27eb47a994e58928654aed6567e9.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/RX3R05BBHC16","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/RX3R05BBHC16 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}