{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN4989(T5L,F,T)","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN4989T5LFT","canonicalUrl":"https://icboms.com/toshiba/RN4989T5LFT","factsUrl":"https://icboms.com/api/mcp/products/RN4989(T5L%2CF%2CT)","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba RN4989(T5L,F,T) dual NPN/PNP pre-biased transistor, 50V VCEO, 100mA Ic, 200mW max power, SOT-363 surface-mount package.","salesMarkdown":"## Dual pre-biased transistor in a single SOT-363 The Toshiba RN4989(T5L,F,T) integrates one NPN and one PNP pre-biased transistor in a single 6-pin SOT-363 (US6) surface-mount package. Each transistor includes built-in bias resistors — 47 kΩ base (R1) and 22 kΩ emitter-base (R2) — eliminating the need for external resistor pairs in low-current switching and interface circuits. Collector-emitter breakdown is rated at 50 V, with a maximum collector current of 100 mA per transistor and total package dissipation of 200 mW. ## Saturation and gain at typical drive Vce(sat) is specified at 300 mV maximum with 250 µA base current driving 5 mA collector current — a common condition for logic-level interface and relay pre-drive. DC current gain (hFE) is a minimum of 70 at 10 mA collector current and 5 V Vce, confirming useful beta for saturated switching. Transition frequency is 250 MHz for the NPN side and 200 MHz for the PNP, adequate for low-speed PWM and digital signal inversion up to a few megahertz.","metaTitle":"RN4989(T5L,F,T) NPN/PNP Pre-Biased Dual Transistor, 50V","metaDescription":"RN4989(T5L,F,T) dual NPN/PNP pre-biased transistor in US6 package. 50V VCEO, 100mA Ic, 200mW max power. RoHS compliant, active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200mW","Mounting Type":"Surface Mount","Package / Case":"6-TSSOP, SC-88, SOT-363","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"47kOhms","Frequency - Transition":"250MHz, 200MHz","Supplier Device Package":"US6","Resistor - Emitter Base (R2)":"22kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100µA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.3","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.30000","currency":"USD"},{"qty":10,"price":"$0.24400","currency":"USD"},{"qty":100,"price":"$0.12920","currency":"USD"},{"qty":500,"price":"$0.08498","currency":"USD"},{"qty":1000,"price":"$0.05778","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f303a32e3ba8efefa21acf1eaeeed7e1.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is RN4989(T5L,F,T) RoHS compliant?","answer":"Yes, the RN4989(T5L,F,T) is listed as RoHS Compliant."},{"question":"Can RN4989 replace RN4988?","answer":"The RN4989 is a dual NPN/PNP pre-biased transistor with 47 kΩ base and 22 kΩ emitter-base resistors. The RN4988 is a similar dual part but with different internal resistor values. Verify the resistor values in your circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN4989T5LFT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN4989T5LFT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}