{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN4906FE,LXHF(CT","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN4906FELXHFCT","canonicalUrl":"https://icboms.com/toshiba/RN4906FELXHFCT","factsUrl":"https://icboms.com/api/mcp/products/RN4906FE%2CLXHF(CT","rawCanonicalId":null},"summary":{"shortDescription":"Automotive, AEC-Q101 dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 4.7kΩ base resistor, 47kΩ emitter-base resistor, SOT-563 package, ES6 supplier device package.","salesMarkdown":"## What this dual pre-biased transistor is for The RN4906FE,LXHF(CT is an automotive-grade dual transistor from the AEC-Q101 series, integrating one NPN and one PNP pre-biased transistor in a single SOT-563 package. The built-in base resistor (R1) of 4.7 kΩ and emitter-base resistor (R2) of 47 kΩ eliminate two external resistors per channel, saving board space and reducing component count in switching and interface circuits. It is specified for surface-mount assembly and rated for a maximum power dissipation of 100 mW. ## Key electrical ratings that decide the fit The collector-emitter breakdown voltage is 50 V maximum, and the continuous collector current rating is 100 mA — suitable for driving low-power loads like relay coils, LED indicators, or logic-level interface transistors in 12 V automotive systems. The 300 mV Vce(sat) at 250 µA base current and 5 mA collector current keeps conduction losses low in saturated switching. DC current gain (hFE) is a minimum of 80 at 10 mA collector current and 5 V Vce, giving enough drive margin for typical microcontroller GPIO outputs. Off-state leakage is limited to 500 nA maximum. ## Package and mounting for automotive PCBs It is a surface-mount device intended for reflow soldering on standard FR-4 or automotive-grade PCB laminates. The compact 1.6 mm × 1.6 mm footprint suits space-constrained modules like engine control units, body controllers, or sensor interface boards where every square millimeter counts.","metaTitle":"RN4906FE,LXHF(CT Dual Pre-Biased NPN/PNP Transistor","metaDescription":"RN4906FE,LXHF(CT dual NPN/PNP pre-biased transistor, AEC-Q101 qualified, 50V Vce, 100mA Ic, SOT-563 package. Available to order against RFQ.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Series":"Automotive, AEC-Q101","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"100mW","Mounting Type":"Surface Mount","Package / Case":"SOT-563, SOT-666","Transistor Type":"1 NPN, 1 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"200MHz, 250MHz","Supplier Device Package":"ES6","Resistor - Emitter Base (R2)":"47kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.39","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.39000","currency":"USD"},{"qty":10,"price":"$0.29100","currency":"USD"},{"qty":100,"price":"$0.18130","currency":"USD"},{"qty":500,"price":"$0.12402","currency":"USD"},{"qty":1000,"price":"$0.09540","currency":"USD"},{"qty":2000,"price":"$0.08586","currency":"USD"},{"qty":4000,"price":"$0.08586","currency":"USD"},{"qty":8000,"price":"$0.08109","currency":"USD"},{"qty":12000,"price":"$0.07394","currency":"USD"},{"qty":28000,"price":"$0.06917","currency":"USD"},{"qty":100000,"price":"$0.06750","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2d5b3e9765c9f82f90bef186543435c0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is RN4906FE AEC-Q101 qualified?","answer":"Yes, the RN4906FE is part of the Automotive, AEC-Q101 series, meaning it is qualified for automotive-grade reliability under the AEC-Q101 stress test standard for discrete semiconductors."},{"question":"What are the base and emitter resistor values of RN4906FE?","answer":"The base resistor (R1) is 4.7 kΩ and the emitter-base resistor (R2) is 47 kΩ, integrated on-chip for both the NPN and PNP transistors."},{"question":"What are the key electrical specs for RN4906FE (Vce, Ic, hFE)?","answer":"Key ratings: collector-emitter breakdown voltage 50 V max, continuous collector current 100 mA max, DC current gain (hFE) minimum 80 at 10 mA / 5 V, Vce(sat) 300 mV max at 250 µA / 5 mA."},{"question":"Is RN4906FE a dual NPN/PNP transistor?","answer":"Yes, it integrates one NPN and one PNP pre-biased transistor in a single package, each with its own integrated bias resistors."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN4906FELXHFCT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN4906FELXHFCT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}