{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2709JE(TE85L,F)","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2709JETE85LF","canonicalUrl":"https://icboms.com/toshiba/RN2709JETE85LF","factsUrl":"https://icboms.com/api/mcp/products/RN2709JE(TE85L%2CF)","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor RN2709JE(TE85L,F) dual PNP pre-biased (emitter coupled) transistor, SOT-553 package, 100mW power dissipation, 50V Vce, 100mA Ic.","salesMarkdown":"## Dual PNP pre-biased transistor in SOT-553 The RN2709JE(TE85L,F) from Toshiba Semiconductor integrates two PNP transistors with built-in bias resistors in a single SOT-553 package — a space-saving option for switching and interface circuits where external resistor networks would otherwise consume board area. Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a maximum power dissipation of 100 mW for the dual device. ## Built-in bias resistors set the switching threshold The base resistor (R1) is 47 kΩ and the base-emitter resistor (R2) is 22 kΩ — this divider network sets the turn-on threshold and provides a leakage path to ground, keeping the transistor off when the drive signal is absent. The 200 MHz transition frequency means the transistor can handle switching applications well into the low-MHz range, though the bias resistor network will limit the practical switching speed more than the fT itself.","metaTitle":"Toshiba RN2709JE(TE85L,F) dual PNP pre-biased transistor","metaDescription":"Toshiba RN2709JE(TE85L,F) dual PNP pre-biased transistor in SOT-553. 100mW power dissipation, 50V Vce, 100mA Ic. Active production, RoHS compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"100mW","Mounting Type":"Surface Mount","Package / Case":"SOT-553","Transistor Type":"2 PNP - Pre-Biased (Dual) (Emitter Coupled)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"47kOhms","Frequency - Transition":"200MHz","Supplier Device Package":"ESV","Resistor - Emitter Base (R2)":"22kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"70 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.46","stockQuantity":30,"priceTiers":[{"qty":1,"price":"$0.48000","currency":"USD"},{"qty":10,"price":"$0.35600","currency":"USD"},{"qty":100,"price":"$0.20170","currency":"USD"},{"qty":500,"price":"$0.13356","currency":"USD"},{"qty":1000,"price":"$0.10240","currency":"USD"},{"qty":2000,"price":"$0.08904","currency":"USD"},{"qty":4000,"price":"$0.08904","currency":"USD"},{"qty":8000,"price":"$0.08014","currency":"USD"},{"qty":12000,"price":"$0.07123","currency":"USD"},{"qty":28000,"price":"$0.06678","currency":"USD"},{"qty":100000,"price":"$0.06300","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/80384f1fd2d12aea22ff3d640ec0c8c5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional alternative to the RN2709JE(TE85L,F)?","answer":"The RN2909FE(TE85L,F) is a close functional peer — same dual PNP pre-biased topology, same 47 kΩ / 22 kΩ resistor network, same 100 mA collector current and 50 V rating, but in a different package (SOT-553 vs the RN2909's package). The RN2713JE(TE85L,F) shares the same emitter-coupled dual PNP structure and SOT-553 package but uses a different bias resistor ratio (47 kΩ base resistor only, no base-emitter resistor)."},{"question":"What is the maximum power dissipation of the RN2709JE(TE85L,F)?","answer":"The RN2709JE(TE85L,F) is rated for 100 mW maximum power dissipation for the dual device in the SOT-553 package — this is the total for both transistors combined, so each transistor's dissipation must be derated accordingly in a balanced design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2709JETE85LF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2709JETE85LF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}