{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2701,LF","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2701LF","canonicalUrl":"https://icboms.com/toshiba/RN2701LF","factsUrl":"https://icboms.com/api/mcp/products/RN2701%2CLF","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor RN2701 series dual PNP pre-biased transistor (BRT), 5-TSSOP/SC-70-5/SOT-353 package, 200mW, 50V Vce, 100mA Ic, 200MHz Ft, 4.7kohm base & emitter resistors.","salesMarkdown":"## SOT-353 dual PNP with integrated bias resistors The RN2701,LF packs two PNP transistors with monolithic base (R1) and emitter-base (R2) resistors, each 4.7 kΩ, into a 5-pin SOT-353 (SC-70-5) package — the bias network is on-die, so the BOM loses two resistor placements and the associated pick-and-place cost. Surface-mount, tape-and-reel or cut-tape delivery. The USV supplier device package code is Toshiba's internal mark for the SOT-353 outline — the footprint matches the industry-standard SC-70-5 land pattern. ## 200 mW power ceiling and 50 V breakdown Each transistor is rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, with a total package dissipation of 200 mW — the limiting factor in a dense board is the copper area under the SOT-353, not the silicon itself. Transition frequency is 200 MHz, so the part handles low-frequency switching and digital-level translation comfortably; the 300 mV Vce saturation at 250 µA base / 5 mA collector means the output drop stays under a logic-low threshold when driving a CMOS input. Minimum DC current gain is 30 at 10 mA collector current, 5 V Vce — the pre-biased resistors set the base current, so the actual gain in circuit is fixed by the resistor ratio, not external components.","metaTitle":"Toshiba RN2701,LF dual PNP pre-biased transistor, 200mW","metaDescription":"RN2701,LF dual PNP pre-biased transistor (BRT) in SOT-353, 200mW, 50V, 100mA Ic, 200MHz Ft. Active, ROHS3. Sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200mW","Mounting Type":"Surface Mount","Package / Case":"5-TSSOP, SC-70-5, SOT-353","Transistor Type":"2 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"200MHz","Supplier Device Package":"USV","Resistor - Emitter Base (R2)":"4.7kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.29","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.29000","currency":"USD"},{"qty":10,"price":"$0.20000","currency":"USD"},{"qty":100,"price":"$0.09780","currency":"USD"},{"qty":500,"price":"$0.08154","currency":"USD"},{"qty":1000,"price":"$0.05666","currency":"USD"},{"qty":3000,"price":"$0.04911","currency":"USD"},{"qty":6000,"price":"$0.04555","currency":"USD"},{"qty":9000,"price":"$0.03777","currency":"USD"},{"qty":30000,"price":"$0.03711","currency":"USD"},{"qty":75000,"price":"$0.03333","currency":"USD"},{"qty":150000,"price":"$0.02889","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7323c97005824bab90917456427187df.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source for RN2701,LF?","answer":"The RN2701JE(TE85L,F) shares the same 4.7 kΩ base and emitter resistors, 200 MHz Ft, and 50 V / 100 mA ratings, but its package dissipation is 100 mW (half the 200 mW of RN2701,LF) and the transistor pair is emitter-coupled rather than independent — the board layout and thermal budget differ."},{"question":"Will RN2701,LF drop into a board laid out for RN2701JE(TE85L,F)?","answer":"Both parts are in SOT-353 (SC-70-5) with the same pinout for dual PNP BRTs — the land pattern is identical. The functional difference is the emitter coupling on the JE variant and the lower 100 mW power limit; the RN2701,LF is a drop-in with higher dissipation headroom."},{"question":"What compliance documentation does Toshiba provide for RN2701,LF?","answer":"The part is ROHS3 compliant. Toshiba supplies a material declaration and REACH/SVHC statement per standard semiconductor industry practice — no UL or IEC certification is listed for this discrete transistor."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2701LF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2701LF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}