{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2610(TE85L,F)","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2610~1TE85L~6F~2","canonicalUrl":"https://icboms.com/toshiba/RN2610~1TE85L~6F~2","factsUrl":"https://icboms.com/api/mcp/products/RN2610(TE85L%2CF)","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba RN2610(TE85L,F) dual PNP pre-biased transistor, 50V Vce breakdown, 100mA collector current, 200MHz transition frequency, 300mW power dissipation, SC-74/SOT-457 SM6 package, surface mount.","salesMarkdown":"## Dual PNP pre-biased transistor in a small SM6 package The Toshiba RN2610(TE85L,F) is a dual PNP pre-biased transistor in an SC-74 (SOT-457) surface-mount package, designated SM6. Each transistor integrates two bias resistors — a 4.7 kΩ base resistor (R1) — eliminating the need for external biasing components in common switching and interface circuits. The 200MHz transition frequency supports medium-speed switching up into the low-MHz range. Maximum power dissipation is 300mW, which sets the thermal budget for the SM6 package — derate accordingly if both transistors are conducting simultaneously near the current limit.","metaTitle":"Toshiba RN2610(TE85L,F) Dual PNP Pre-Biased Transistor, 50V","metaDescription":"Toshiba RN2610(TE85L,F) dual PNP pre-biased transistor in SC-74/SOT-457. 50V Vce, 100mA Ic, 200MHz fT, 300mW. Active, RoHS.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"300mW","Mounting Type":"Surface Mount","Package / Case":"SC-74, SOT-457","Transistor Type":"2 PNP - Pre-Biased (Dual)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"200MHz","Supplier Device Package":"SM6","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 1mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.49000","currency":"USD"},{"qty":10,"price":"$0.36700","currency":"USD"},{"qty":100,"price":"$0.20770","currency":"USD"},{"qty":500,"price":"$0.13756","currency":"USD"},{"qty":1000,"price":"$0.10547","currency":"USD"},{"qty":3000,"price":"$0.08904","currency":"USD"},{"qty":6000,"price":"$0.08014","currency":"USD"},{"qty":15000,"price":"$0.07123","currency":"USD"},{"qty":30000,"price":"$0.06678","currency":"USD"},{"qty":75000,"price":"$0.06300","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4d7332af1f1555cab3b6541e2714fdb7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum power dissipation of RN2610(TE85L,F)?","answer":"The maximum power dissipation is 300mW. This is the total for the SM6 package; when both transistor channels are active, the dissipation per channel must be derated to stay within the package limit."},{"question":"What is the maximum collector current of RN2610?","answer":"The maximum continuous collector current (Ic) is 100mA per transistor channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2610~1TE85L~6F~2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2610~1TE85L~6F~2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}