{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2422TE85LF","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2422TE85LF","canonicalUrl":"https://icboms.com/toshiba/RN2422TE85LF","factsUrl":"https://icboms.com/api/mcp/products/RN2422TE85LF","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba RN2422TE85LF PNP pre-biased transistor, 50 V collector-emitter breakdown, 800 mA collector current, 200 mW power dissipation, S-Mini (SOT-23-3) surface-mount package, Tape & Reel.","salesMarkdown":"## Saturation and gain at operating point The RN2422TE85LF: Vce(sat) is specified at 250 mV maximum with 1 mA base drive into 50 mA collector current — the low saturation voltage keeps conduction losses under 12.5 mW at that point, well within the 200 mW package limit. DC current gain (hFE) is a minimum of 65 at 100 mA, 1 Vce, ensuring the transistor saturates reliably when driven from a logic gate through the integrated 2.2 kOhm base resistor. Transition frequency of 200 MHz means the device switches cleanly at PWM frequencies up to several hundred kilohertz; the limiting factor in practice is the base charge storage, not the ft. Supplied in the S-Mini package (JEDEC TO-236-3 / SC-59 / SOT-23-3), the three-lead footprint is standard for small-signal transistors — the same land pattern accepts NPN siblings like the RN1422TE85LF without a board spin.","metaTitle":"Toshiba RN2422TE85LF PNP Pre-Biased, 50V 0.8A, S-Mini","metaDescription":"Toshiba RN2422TE85LF PNP pre-biased transistor, 50V VCEO, 800mA Ic, 200mW, S-Mini (SOT-23-3). Active, ROHS3 compliant. Sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"2.2 kOhms","Frequency - Transition":"200 MHz","Supplier Device Package":"S-Mini","Resistor - Emitter Base (R2)":"2.2 kOhms","Vce Saturation (Max) @ Ib, Ic":"250mV @ 1mA, 50mA","Current - Collector (Ic) (Max)":"800 mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"65 @ 100mA, 1V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.45","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.45000","currency":"USD"},{"qty":10,"price":"$0.31900","currency":"USD"},{"qty":100,"price":"$0.16110","currency":"USD"},{"qty":500,"price":"$0.14276","currency":"USD"},{"qty":1000,"price":"$0.11110","currency":"USD"},{"qty":3000,"price":"$0.09943","currency":"USD"},{"qty":6000,"price":"$0.09721","currency":"USD"},{"qty":9000,"price":"$0.08610","currency":"USD"},{"qty":30000,"price":"$0.08499","currency":"USD"},{"qty":75000,"price":"$0.07221","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/67ad7da621f7e01ee5c526b11e3e644d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source to RN2422TE85LF?","answer":"The RN2427TE85LF is the closest peer: same PNP pre-biased type, same 2.2 kOhm base resistor (R1), same 50 V / 0.8 A ratings, same S-Mini package. The only difference is the emitter-base resistor (R2) — 10 kOhms on the RN2427 versus 2.2 kOhms on the RN2422. The higher R2 value on the RN2427 reduces the off-state leakage current at the cost of slightly slower turn-off. A board designed for the RN2422 can accept the RN2427 without layout changes, but the switching threshold shifts."},{"question":"Will RN2422TE85LF drop into a board laid out for RN2427TE85LF without rewiring?","answer":"Yes — both share the same S-Mini (SOT-23-3) footprint and pinout. The base and collector connections are identical. The only parametric difference is the emitter-base resistor value (2.2 kOhms vs 10 kOhms), which affects the off-state leakage and the base drive current drawn from the upstream logic output. Confirm the base drive margin at the logic output's current-sourcing capability before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2422TE85LF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2422TE85LF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}