{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2413TE85LF","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2413TE85LF","canonicalUrl":"https://icboms.com/toshiba/RN2413TE85LF","factsUrl":"https://icboms.com/api/mcp/products/RN2413TE85LF","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor RN2413TE85LF PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 200 mW power dissipation, S-Mini SOT-23-3 package, Tape & Reel.","salesMarkdown":"## PNP pre-biased transistor, 50 V, 100 mA The RN2413TE85LF is a PNP pre-biased transistor from Toshiba, rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, dissipating up to 200 mW. ## S-Mini SOT-23 footprint Housed in the S-Mini package (TO-236-3 / SC-59 / SOT-23-3), it uses a standard three-lead SOT-23 footprint that places reliably on most reflow profiles with minimal tombstoning risk. Surface-mount assembly with Tape & Reel or Cut Tape packaging suits both high-volume and prototype runs.","metaTitle":"RN2413TE85LF PNP Pre-Biased Transistor, 50V, 100mA, S-Mini","metaDescription":"Toshiba RN2413TE85LF PNP pre-biased transistor, 50V VCEO, 100mA Ic, 200mW, S-Mini SOT-23 package. Active, RoHS3 compliant. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"47 kOhms","Frequency - Transition":"200 MHz","Supplier Device Package":"S-Mini","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 1mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.32","stockQuantity":28,"priceTiers":[{"qty":1,"price":"$0.32000","currency":"USD"},{"qty":10,"price":"$0.21900","currency":"USD"},{"qty":100,"price":"$0.10670","currency":"USD"},{"qty":500,"price":"$0.08896","currency":"USD"},{"qty":1000,"price":"$0.06181","currency":"USD"},{"qty":3000,"price":"$0.05357","currency":"USD"},{"qty":6000,"price":"$0.04969","currency":"USD"},{"qty":9000,"price":"$0.04121","currency":"USD"},{"qty":30000,"price":"$0.04048","currency":"USD"},{"qty":75000,"price":"$0.03636","currency":"USD"},{"qty":150000,"price":"$0.03151","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source for RN2413TE85LF?","answer":"The RN2418,LF is a PNP pre-biased transistor with the same 47 kOhm base resistor, 50 V breakdown, 100 mA collector current, and 200 mW power rating. The key difference is that RN2418 adds a 10 kOhm emitter-base resistor (R2), which changes the off-state leakage and input threshold. Check whether your circuit relies on the internal bias network before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2413TE85LF","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2413TE85LF when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}