{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2104MFV,L3XHF(CT","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2104MFVL3XHFCT","canonicalUrl":"https://icboms.com/toshiba/RN2104MFVL3XHFCT","factsUrl":"https://icboms.com/api/mcp/products/RN2104MFV%2CL3XHF(CT","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor RN2104MFV,L3XHF(CT PNP pre-biased transistor, AEC-Q101 Automotive, 50V VCEO, 100mA Ic, 150mW, SOT-723 VESM, Tape & Reel / Cut Tape.","salesMarkdown":"## AEC-Q101 automotive pre-biased PNP — package and bias network The Toshiba RN2104MFV,L3XHF(CT is an AEC-Q101-qualified PNP pre-biased transistor in a SOT-723 VESM package, rated for 50 V collector-emitter breakdown and 100 mA continuous collector current. The integrated bias network — 47 kOhm base resistor (R1) and 47 kOhm emitter-base resistor (R2) — eliminates two external passives from the BOM, saving board space and reducing pick-and-place cost in high-volume automotive modules. ## Saturation voltage and switching performance Vce(sat) is specified at 300 mV maximum with a 500 µA base drive and 5 mA collector current — the low on-state voltage keeps conduction losses under 1.5 mW at that operating point, well within the 150 mW total power dissipation envelope. Transition frequency is 250 MHz, so the device handles PWM switching in the low-MHz range without significant gain rolloff. ## Board-fit and temperature-grade context The SOT-723 VESM footprint measures roughly 1.2 mm × 1.2 mm with a seated height under 0.5 mm — this is one of the smallest packages for a pre-biased transistor, suited for ECU sub-assemblies where every mm² of PCB real estate is budgeted. The Automotive grade (AEC-Q101) means the part has passed the full suite of reliability stress tests: temperature cycling, high-temperature reverse bias, and autoclave. PPAP documentation is available on request for OEM audit packages.","metaTitle":"Toshiba RN2104MFV,L3XHF(CT PNP Pre-Biased, AEC-Q101, 50V","metaDescription":"Toshiba RN2104MFV,L3XHF(CT PNP pre-biased transistor, 50V, 100mA, 150mW, SOT-723 VESM. AEC-Q101 Automotive grade. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Grade":"Automotive","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"150 mW","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"SOT-723","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"47 kOhms","Frequency - Transition":"250 MHz","Supplier Device Package":"VESM","Resistor - Emitter Base (R2)":"47 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 5mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.33","stockQuantity":28,"priceTiers":[{"qty":1,"price":"$0.33000","currency":"USD"},{"qty":10,"price":"$0.22800","currency":"USD"},{"qty":100,"price":"$0.11110","currency":"USD"},{"qty":500,"price":"$0.09266","currency":"USD"},{"qty":1000,"price":"$0.06439","currency":"USD"},{"qty":2000,"price":"$0.05580","currency":"USD"},{"qty":8000,"price":"$0.05176","currency":"USD"},{"qty":16000,"price":"$0.04293","currency":"USD"},{"qty":24000,"price":"$0.04217","currency":"USD"},{"qty":56000,"price":"$0.03788","currency":"USD"},{"qty":200000,"price":"$0.03283","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What compliance documentation does Toshiba provide for RN2104MFV,L3XHF(CT?","answer":"As an AEC-Q101-qualified Automotive-grade part, Toshiba provides PPAP documentation, RoHS and REACH compliance declarations, and the full AEC-Q101 reliability test report."},{"question":"Will RN2104MFV,L3XHF(CT drop into a board specified around RN2106MFV,L3XHF(CT without rewiring?","answer":"Both parts share the same SOT-723 VESM package, so the footprint is identical. However, the base resistor (R1) differs — 47 kOhms on RN2104MFV versus 4.7 kOhms on RN2106MFV. The bias current at a given base drive voltage will be 10× lower, which changes the saturation behavior. Confirm the base-drive circuit before substituting; the pinout itself is the same."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2104MFVL3XHFCT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2104MFVL3XHFCT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}