{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN2101MFV,L3XHF(CT","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN2101MFVL3XHFCT","canonicalUrl":"https://icboms.com/toshiba/RN2101MFVL3XHFCT","factsUrl":"https://icboms.com/api/mcp/products/RN2101MFV%2CL3XHF(CT","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba Semiconductor Automotive series RN2101MFV,L3XHF(CT PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 150 mW power, SOT-723 VESM package, AEC-Q101 qualified.","salesMarkdown":"## AEC-Q101 pre-biased PNP for automotive signal switching The RN2101MFV,L3XHF(CT is a PNP pre-biased transistor from Toshiba's Automotive series, qualified to AEC-Q101 — the automotive discrete semiconductor reliability standard covering temperature grade, ESD sensitivity, and PPAP-level traceability. This qualification places it in under-hood or cabin-domain circuits where the ambient temperature and vibration profile exceed commercial-grade limits. Integrated bias resistors R1 (base) and R2 (emitter-base) are both 4.7 kOhms, eliminating two external passives per channel. The 50 V collector-emitter breakdown and 100 mA continuous collector current suit it for driving low-current loads like relay coils, indicator LEDs, or logic-level interface stages in an automotive ECU. ## SOT-723 VESM — 0.5 mm pitch, 1.2 × 1.2 mm body Housed in the SOT-723 package with supplier device package designation VESM, the part measures approximately 1.2 × 1.2 mm with a 0.5 mm lead pitch. The small footprint demands a controlled solder-paste stencil aperture to avoid bridging between the base and emitter pads — a 0.4 mm stencil thickness and 1:1 pad-to-aperture ratio is a typical starting point for reflow profiles. The 150 mW power dissipation ceiling limits continuous collector current at elevated ambient temperatures. At 85 °C ambient, derating to roughly 60% of the 150 mW maximum is prudent unless the board has a dedicated thermal relief plane under the package.","metaTitle":"RN2101MFV,L3XHF(CT Toshiba PNP Pre-Biased, 50V 100mA","metaDescription":"Toshiba RN2101MFV,L3XHF(CT PNP pre-biased transistor, 50V Vce, 100mA Ic, 4.7kOhm R1/R2, SOT-723 VESM, AEC-Q101. Active, quoted to order.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"Automotive, AEC-Q101","Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"150 mW","Mounting Type":"Surface Mount","Package / Case":"SOT-723","Transistor Type":"PNP - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7 kOhms","Frequency - Transition":"250 MHz","Supplier Device Package":"VESM","Resistor - Emitter Base (R2)":"4.7 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500µA, 5mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.33","stockQuantity":31,"priceTiers":[{"qty":1,"price":"$0.35000","currency":"USD"},{"qty":10,"price":"$0.28500","currency":"USD"},{"qty":100,"price":"$0.15100","currency":"USD"},{"qty":500,"price":"$0.09938","currency":"USD"},{"qty":1000,"price":"$0.06758","currency":"USD"},{"qty":2000,"price":"$0.06095","currency":"USD"},{"qty":8000,"price":"$0.05300","currency":"USD"},{"qty":16000,"price":"$0.04505","currency":"USD"},{"qty":24000,"price":"$0.04240","currency":"USD"},{"qty":56000,"price":"$0.03975","currency":"USD"},{"qty":200000,"price":"$0.03750","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between RN2101MFV,L3XHF(CT and RN2106MFV,L3XHF(CT?","answer":"Both are AEC-Q101 PNP pre-biased transistors in SOT-723 VESM with identical 4.7 kOhm base resistor (R1) and 50 V / 100 mA ratings. The RN2106MFV differs only in the emitter-base resistor (R2): 47 kOhms vs 4.7 kOhms on the RN2101. This changes the input threshold voltage and the off-state leakage characteristics — the RN2101 turns off more cleanly with a lower R2 value."},{"question":"What package does RN2101MFV,L3XHF(CT use?","answer":"The part is supplied in SOT-723, designated VESM by Toshiba."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN2101MFVL3XHFCT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN2101MFVL3XHFCT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}