{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN1710JE(TE85L,F)","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN1710JE~1TE85L~6F~2","canonicalUrl":"https://icboms.com/toshiba/RN1710JE~1TE85L~6F~2","factsUrl":"https://icboms.com/api/mcp/products/RN1710JE(TE85L%2CF)","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba RN1710JE(TE85L,F) dual NPN pre-biased transistor, 50V VCEO, 100mA Ic, 250MHz fT, SOT-553 surface mount package, Tape & Reel.","salesMarkdown":"## Dual pre-biased NPN in SOT-553 The Toshiba RN1710JE(TE85L,F) integrates two NPN transistors with internal bias resistors in a single SOT-553 package, each with a base resistor of 4.7 kΩ. The emitter-coupled pair shares a common emitter node, simplifying layout for differential or cascode stages where two matched transistors are needed. ## 250 MHz transition frequency With a transition frequency of 250 MHz, this part can handle fast switching in signal conditioning, level translation, or oscillator circuits. The integrated bias resistors eliminate two external resistors per transistor, cutting BOM count and board area.","metaTitle":"RN1710JE(TE85L,F) Dual NPN Pre-Biased Transistor, 50V, 100mA","metaDescription":"RN1710JE(TE85L,F) dual NPN pre-biased transistor, 50V VCEO, 100mA Ic, 250MHz fT, SOT-553. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"100mW","Mounting Type":"Surface Mount","Package / Case":"SOT-553","Transistor Type":"2 NPN - Pre-Biased (Dual) (Emitter Coupled)","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"4.7kOhms","Frequency - Transition":"250MHz","Supplier Device Package":"ESV","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100mA","Current - Collector Cutoff (Max)":"100nA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"120 @ 1mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.41","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.41000","currency":"USD"},{"qty":10,"price":"$0.30500","currency":"USD"},{"qty":100,"price":"$0.17290","currency":"USD"},{"qty":500,"price":"$0.11448","currency":"USD"},{"qty":1000,"price":"$0.08777","currency":"USD"},{"qty":2000,"price":"$0.07632","currency":"USD"},{"qty":4000,"price":"$0.07632","currency":"USD"},{"qty":8000,"price":"$0.06869","currency":"USD"},{"qty":12000,"price":"$0.06106","currency":"USD"},{"qty":28000,"price":"$0.05724","currency":"USD"},{"qty":100000,"price":"$0.05400","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e9cd1cace9f799a58f8429201352c261.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the hFE of RN1710JE at 1 mA?","answer":"The DC current gain (hFE) is 120 minimum at 1 mA collector current with 5 V VCE."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN1710JE~1TE85L~6F~2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN1710JE~1TE85L~6F~2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}