{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RN1417(TE85L,F)","brand":"Toshiba Semiconductor","brandSlug":"toshiba","productSlug":"RN1417~1TE85L~6F~2","canonicalUrl":"https://icboms.com/toshiba/RN1417~1TE85L~6F~2","factsUrl":"https://icboms.com/api/mcp/products/RN1417(TE85L%2CF)","rawCanonicalId":null},"summary":{"shortDescription":"Toshiba RN1417(TE85L,F) NPN pre-biased transistor, 50 V Vce breakdown, 100 mA Ic, 250 MHz transition frequency, S-Mini (SOT-23-3) package, 200 mW power dissipation.","salesMarkdown":"## Pre-biased NPN – what the integrated resistors save you The Toshiba RN1417(TE85L,F) is an NPN pre-biased transistor in a three-pin S-Mini (SOT-23-3) surface-mount package. It integrates a 10 kΩ base resistor (R1) and a 4.7 kΩ emitter-base resistor (R2) on-chip, so you can drive the base directly from a logic output without adding external bias components. That cuts the placement count and shrinks the board area for high-density designs. The 250 MHz transition frequency keeps switching edges clean for PWM up to a few megahertz. Saturation voltage is 300 mV at 5 mA collector current with 250 µA base drive, so the on-state loss stays low in saturated switching. Toshiba lists the RN1417(TE85L,F) as Active with RoHS compliance.","metaTitle":"Toshiba RN1417(TE85L,F) NPN Pre-Biased Transistor, 50 V","metaDescription":"Toshiba RN1417(TE85L,F) NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 250 MHz fT, S-Mini package. Active lifecycle, RoHS compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"RoHS Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"200 mW","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Transistor Type":"NPN - Pre-Biased","lifecycle_stage":"eol_hot","Resistor - Base (R1)":"10 kOhms","Frequency - Transition":"250 MHz","Supplier Device Package":"S-Mini","Resistor - Emitter Base (R2)":"4.7 kOhms","Vce Saturation (Max) @ Ib, Ic":"300mV @ 250µA, 5mA","Current - Collector (Ic) (Max)":"100 mA","Current - Collector Cutoff (Max)":"500nA","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 10mA, 5V","Voltage - Collector Emitter Breakdown (Max)":"50 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.34","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.35000","currency":"USD"},{"qty":10,"price":"$0.24300","currency":"USD"},{"qty":100,"price":"$0.12250","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab4c22d5920113939507ee4659ece2f9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How does the RN1417(TE85L,F) compare to the RN1414?","answer":"Both are pre-biased NPN transistors in the same S-Mini package family. The RN1417 uses a 10 kΩ base resistor and 4.7 kΩ emitter-base resistor; the RN1414 uses different resistor values. Check the specific bias resistor ratio for your base-drive design — the RN1417 is suited for logic-level outputs that need a higher base current than the RN1414 provides."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/toshiba/RN1417~1TE85L~6F~2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/toshiba/RN1417~1TE85L~6F~2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}