{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJK5033DPP-M0#T2","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJK5033DPP-M0T2","canonicalUrl":"https://icboms.com/renesas/RJK5033DPP-M0T2","factsUrl":"https://icboms.com/api/mcp/products/RJK5033DPP-M0%23T2","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJK5033DPP-M0#T2, N-Channel MOSFET, 500 V Vdss, 6 A continuous drain, 1.3 Ohm Rds(on) at 10 V, TO-220-3 Full Pack (TO-220FL), Through Hole, ROHS3 compliant, Active.","salesMarkdown":"## 500 V N-channel in a fully isolated TO-220FL The RJK5033DPP-M0#T2: The full-pack moulding isolates the tab electrically, so the mounting screw or clip does not need a separate insulator — the back of the package is the isolation barrier. This saves one assembly step and a mica pad per board position. ## 1.3 Ohm Rds(on) — conduction loss at 3 A At that operating point the conduction loss is I²R = 3² × 1.3 = 11.7 W, which sits inside the 27.4 W power dissipation limit at the case. The gate drive voltage is 10 V nominal — the Rds(on) is not characterised at 5 V logic-level drive, so a 12 V or 15 V gate supply is the intended bias. ## Input capacitance and switching edge Input capacitance Ciss is 600 pF maximum at 25 V drain-source. For a 500 V part this is a moderate figure. ## Active lifecycle — BOM line is not at LTB risk ROHS3 compliance is confirmed.","metaTitle":"RJK5033DPP-M0#T2 MOSFET, N-Channel 500V 6A TO-220FL","metaDescription":"RJK5033DPP-M0#T2 N-channel MOSFET, 500 V Vdss, 6 A continuous drain, 1.3 Ohm Rds(on) at 10 V. TO-220FL full-pack. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.3Ohm @ 3A, 10V","Power Dissipation (Max)":"27.4W (Tc)","Supplier Device Package":"TO-220FL","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"600 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.98","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.98000","currency":"USD"},{"qty":10,"price":"$2.67900","currency":"USD"},{"qty":100,"price":"$2.19500","currency":"USD"},{"qty":500,"price":"$1.86856","currency":"USD"},{"qty":1000,"price":"$1.57590","currency":"USD"},{"qty":2000,"price":"$1.49710","currency":"USD"},{"qty":5000,"price":"$1.47280","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7e6e50cfd3432f8cad4afce134a75db5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the RJK5033DPP-M0#T2?","answer":"The maximum Rds(on) is 1.3 Ohm at a drain current of 3 A and a gate-source voltage of 10 V. This is the conduction loss spec for the 3 A operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJK5033DPP-M0T2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJK5033DPP-M0T2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}