{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJK2075DPA-00#J5A","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJK2075DPA-00J5A","canonicalUrl":"https://icboms.com/renesas/RJK2075DPA-00J5A","factsUrl":"https://icboms.com/api/mcp/products/RJK2075DPA-00%23J5A","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJK2075DPA-00#J5A N-Channel MOSFET, 200 V Vdss, 20 A continuous drain, 69 mOhm Rds(on) at 10 A, 10 V, 38 nC gate charge, 8-PowerVDFN (WPAK 3F 5x6) package, surface mount, ROHS3 compliant.","salesMarkdown":"## 200 V N-Channel MOSFET in a compact WPAK The Renesas RJK2075DPA-00#J5A is an N-Channel MOSFET rated for 200 V drain-to-source and 20 A continuous drain at 25°C, housed in an 8-PowerVDFN (WPAK 3F 5x6) surface-mount package. ## Conduction and switching — what the ratings tell you Input capacitance is 2200 pF at 25 V drain-source — that is moderate for a 200 V, 20 A part and keeps the driver load manageable. The maximum gate-source voltage is ±30 V, which gives headroom if the drive rail has ringing or overshoot. ## Package and thermal — the board-level deal This is a surface-mount device in an 8-PowerVDFN, also called WPAK 3F (5x6 mm). The junction temperature limit is 150°C. ## Lifecycle and sourcing posture It is ROHS3 compliant.","metaTitle":"RJK2075DPA-00#J5A N-Channel MOSFET, 200 V, 20 A, WPAK","metaDescription":"RJK2075DPA-00#J5A N-Channel MOSFET, 200 V Vdss, 20 A continuous drain, 69 mOhm Rds(on) at 10 A, 10 V. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"69mOhm @ 10A, 10V","Power Dissipation (Max)":"65W (Ta)","Supplier Device Package":"WPAK(3F) (5x6)","Gate Charge (Qg) (Max) @ Vgs":"38 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"2200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.36023","stockQuantity":0,"priceTiers":[{"qty":3000,"price":"$1.36023","currency":"USD"},{"qty":6000,"price":"$1.30500","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6462502bcd8d5442680849caa6cb5440.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of RJK2075DPA-00#J5A?","answer":"The maximum on-resistance is 69 mOhm at a drain current of 10 A and a gate-source voltage of 10 V. This is the conduction-loss spec used for thermal and efficiency calculations at the nominal operating point."},{"question":"Is RJK2075DPA-00#J5A RoHS compliant?","answer":"Yes, it is rated ROHS3 compliant, meaning it meets the latest RoHS directive without any of the exempted substances."},{"question":"What is the gate charge of RJK2075DPA-00#J5A?","answer":"The total gate charge is 38 nC at a gate-source voltage of 10 V. This value determines the gate-drive current needed for a given switching frequency — for example, at 100 kHz the average gate-drive current is about 3.8 mA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJK2075DPA-00J5A","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJK2075DPA-00J5A when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}