{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJK0855DPB-00#J5","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJK0855DPB-00J5","canonicalUrl":"https://icboms.com/renesas/RJK0855DPB-00J5","factsUrl":"https://icboms.com/api/mcp/products/RJK0855DPB-00%23J5","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJK0855DPB-00#J5, N-Channel MOSFET, 80 V drain-source, 30 A continuous drain, 11 mOhm Rds(on) at 15 A / 10 V, LFPAK (SOT-669) surface-mount package, 150 °C junction temperature.","salesMarkdown":"## Gate charge and switching speed — 35 nC at 10 V Total gate charge is 35 nC at 10 V, which means a standard gate driver (1–2 A peak) can switch this FET in the tens-of-nanoseconds range without excessive drive power. The 2550 pF input capacitance at 10 V drain-source is typical for this current class — plan your gate-drive loop inductance accordingly to avoid ringing. Maximum gate-source voltage is ±20 V, so the 10 V drive used for the Rds(on) spec is well inside the safe window; no need for a zener clamp unless the gate driver overshoots. ## Thermal and power — 60 W dissipation, 150 °C junction Maximum power dissipation is 60 W at case temperature, and the junction is rated to 150 °C. In a real board, the LFPAK's exposed pad soldered to a 1 oz copper plane of at least 2–3 square inches on the top layer will keep the junction below 125 °C at 30 A continuous — but derate above 25 °C ambient per the datasheet curve. ## Active production, ROHS3 compliant ROHS3 compliant, no exemptions needed for lead-free assembly.","metaTitle":"RJK0855DPB-00#J5 N-Channel MOSFET, 80V 30A LFPAK","metaDescription":"RJK0855DPB-00#J5 N-Channel MOSFET, 80V drain-source, 30A continuous, 11mOhm Rds(on) at 15A/10V, LFPAK package. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"SC-100, SOT-669","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"11mOhm @ 15A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"LFPAK","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"2550 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"30A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.19285","stockQuantity":0,"priceTiers":[{"qty":2500,"price":"$1.19285","currency":"USD"},{"qty":5000,"price":"$1.14801","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7b064ecbf77369233a9b701c04217981.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of RJK0855DPB-00#J5?","answer":"Maximum Rds(on) is 11 mOhm at 15 A drain current with 10 V gate drive. This is the on-resistance at the rated test condition; actual resistance rises with junction temperature, so budget 1.5× to 2× at 125 °C junction."},{"question":"Is RJK0855DPB-00#J5 ROHS compliant?","answer":"Yes, it is ROHS3 compliant — no restricted substances above the threshold limits, suitable for lead-free reflow assembly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJK0855DPB-00J5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJK0855DPB-00J5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}