{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJK0658DPA-00#J5A","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJK0658DPA-00J5A","canonicalUrl":"https://icboms.com/renesas/RJK0658DPA-00J5A","factsUrl":"https://icboms.com/api/mcp/products/RJK0658DPA-00%23J5A","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJK0658DPA-00#J5A, N-Channel MOSFET, 60 V Vdss, 25 A continuous drain, 11.1 mOhm Rds(on) at 12.5 A, 10 V gate drive, 19.4 nC gate charge, 8-WPAK surface mount package.","salesMarkdown":"## 60 V N-channel in an 8-WPAK — what the ratings tell the BOM engineer The Renesas RJK0658DPA-00#J5A is a 60 V N-channel power MOSFET in a compact 8-WFDFN exposed-pad package supplied as 8-WPAK. ## Gate charge and switching — what 19.4 nC means for the driver Total gate charge is 19.4 nC at 10 V. At a 100 kHz switching frequency, the average gate-drive current required is roughly 1.94 mA — well within the capability of a standard MOSFET driver. The 1580 pF input capacitance at 10 V drain-source confirms the gate is not excessively large for moderate-speed switching in a 48 V or 12 V rail. The drive voltage for minimum Rds(on) is specified at 10 V, with a maximum gate-source rating of ±20 V. This part will not fully enhance at 5 V logic-level gate drive; plan for a 10 V gate supply or a dedicated gate-driver IC. ## Thermal budget — 50 W in an 8-WPAK Maximum power dissipation is 50 W at the case temperature. The 8-WFDFN exposed-pad package relies on the PCB copper area under the pad for heat spreading. A 2-ounce copper pour of at least 1 square inch on the top layer, with thermal vias to an inner ground plane, is the typical starting point to keep junction temperature within the 150 °C maximum.","metaTitle":"RJK0658DPA-00#J5A N-Channel MOSFET, 60V 25A 8-WPAK","metaDescription":"Renesas RJK0658DPA-00#J5A N-channel MOSFET, 60V Vdss, 25A continuous drain, 11.1mOhm Rds(on) at 12.5A. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-WFDFN Exposed Pad","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"11.1mOhm @ 12.5A, 10V","Power Dissipation (Max)":"50W (Tc)","Supplier Device Package":"8-WPAK","Gate Charge (Qg) (Max) @ Vgs":"19.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1580 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.99942","stockQuantity":0,"priceTiers":[{"qty":3000,"price":"$0.99942","currency":"USD"},{"qty":6000,"price":"$0.96184","currency":"USD"},{"qty":9000,"price":"$0.93000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b83d6a12791747f91c46d71bb4291091.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is RJK0658DPA-00#J5A compatible with 5V gate drive?","answer":"No. At 5 V gate-source, the MOSFET will not fully enhance, resulting in higher on-resistance and potential thermal runaway. A 10 V gate supply or a gate-driver IC is required."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJK0658DPA-00J5A","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJK0658DPA-00J5A when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}