{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJK0455DPB-00#J5","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJK0455DPB-00J5","canonicalUrl":"https://icboms.com/renesas/RJK0455DPB-00J5","factsUrl":"https://icboms.com/api/mcp/products/RJK0455DPB-00%23J5","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJK0455DPB-00#J5 N-Channel MOSFET, 40 V drain-to-source voltage, 45 A continuous drain current at 25 °C, 3.8 mOhm Rds(on) at 22.5 A, 10 V, LFPAK (SC-100, SOT-669) surface-mount package.","salesMarkdown":"ROHS3 compliant per the listing, so no conflict with EU or global RoHS directives. No special handling or exemption paperwork needed for the BOM. ## 40 V, 45 A — the load budget anchor For a 12 V or 24 V rail, that leaves healthy derating margin — the 40 V Vdss covers transients on a 24 V bus without avalanche worry. The 45 A rating sets the load budget: a motor-drive or DC-DC stage pulling 30 A continuous is well inside the SOA at 25 °C case. On-resistance is 3.8 mOhm maximum at 22.5 A, 10 V gate drive. That is the conduction loss floor — at 30 A, I²R loss is about 3.4 W, well within the 60 W power dissipation ceiling at case temperature Tc. ## Gate charge and switching — what the 34 nC means Total gate charge Qg is 34 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is Qg × f = 3.4 mA — a standard driver handles that easily. At 500 kHz the drive current climbs to 17 mA, still within most gate-drive ICs, but the input capacitance Ciss of 2550 pF at 10 V means the driver must source enough peak current to charge that capacitance quickly for clean edges. At 60 W dissipation, the junction-to-case thermal path is the bottleneck. ## LFPAK — footprint and thermal reality The SC-100 / SOT-669 LFPAK package is a 5×6 mm surface-mount power package with an exposed drain pad. Without adequate thermal vias to an inner-layer plane, the 60 W power dissipation rating is unreachable. Surface-mount only; no through-hole variant. The 0.50 mm pitch leads require a 2-layer board at minimum; a 4-layer board with a dedicated ground plane under the pad is the typical approach for the full current rating.","metaTitle":"RJK0455DPB-00#J5 N-Channel MOSFET, 40 V, 45 A, LFPAK","metaDescription":"RJK0455DPB-00#J5 N-Channel MOSFET, 40 V drain-source, 45 A continuous drain, 3.8 mOhm Rds(on) at 10 V. LFPAK surface-mount package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"SC-100, SOT-669","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.8mOhm @ 22.5A, 10V","Power Dissipation (Max)":"60W (Tc)","Supplier Device Package":"LFPAK","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"2550 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"45A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.71","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.71000","currency":"USD"},{"qty":10,"price":"$2.25200","currency":"USD"},{"qty":100,"price":"$1.79220","currency":"USD"},{"qty":500,"price":"$1.51652","currency":"USD"},{"qty":1000,"price":"$1.28674","currency":"USD"},{"qty":2500,"price":"$1.22240","currency":"USD"},{"qty":5000,"price":"$1.17645","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f90b9c6a8db6b7e616c6a85e65f143ed.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum drain current of RJK0455DPB?","answer":"This is the headline current rating for load budgeting."},{"question":"Is RJK0455DPB-00#J5 RoHS compliant?","answer":"Yes — it is ROHS3 compliant per the listing. No RoHS conflict for EU or global BOMs."},{"question":"What is the equivalent part for RJK0455DPB?","answer":"The NP179N055TUK--AY is a peer N-channel MOSFET with higher ratings (55 V, 180 A) and AEC-Q101 automotive qualification, but it is not a pin-compatible drop-in — the package and footprint differ. For a direct functional equivalent at the 40 V / 45 A level, no official second source is listed; the RJK0455DPB is the primary part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJK0455DPB-00J5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJK0455DPB-00J5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}