{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJK03M2DPA-00#J5A","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJK03M2DPA-00J5A","canonicalUrl":"https://icboms.com/renesas/RJK03M2DPA-00J5A","factsUrl":"https://icboms.com/api/mcp/products/RJK03M2DPA-00%23J5A","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJK03M2DPA-00#J5A, N-Channel MOSFET, 30 Vdss, 45 A continuous drain, 2.8 mOhm Rds(on) at 22.5 A, 10 V gate drive, 8-WPAK surface-mount package, 150 °C junction temperature.","salesMarkdown":"## 30 V, 45 A N-channel in an 8-WPAK — the switching FET for 12 V rails The 8-WFDFN exposed-pad package (supplier device package 8-WPAK) is a small footprint for point-of-load converters, load switches, and battery protection circuits. ## Gate charge and drive voltage — logic-level compatible The FET fully enhances with a 4.5 V gate drive, making it compatible with 5 V logic or a 3.3 V-driven gate driver. Maximum gate charge is 21.2 nC at 4.5 V, so a modest gate-drive IC can switch it at several hundred kilohertz without excessive drive losses. Input capacitance is 3850 pF at 10 V drain-source — the gate-drive loop inductance and resistance need to be kept low to avoid ringing on the gate waveform. ## Thermal budget and the exposed pad Maximum power dissipation is 40 W at the case, but the 8-WFDFN package relies on the PCB copper area under the exposed pad to pull heat out.","metaTitle":"RJK03M2DPA-00#J5A N-Channel MOSFET, 30 V, 45 A, 2.8 mOhm","metaDescription":"RJK03M2DPA-00#J5A N-Channel MOSFET, 30 Vdss, 45 A continuous, 2.8 mOhm Rds(on) at 22.5 A. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-WFDFN Exposed Pad","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"2.8mOhm @ 22.5A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"8-WPAK","Gate Charge (Qg) (Max) @ Vgs":"21.2 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"3850 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"45A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.81538","stockQuantity":0,"priceTiers":[{"qty":3000,"price":"$0.81538","currency":"USD"},{"qty":6000,"price":"$0.78473","currency":"USD"},{"qty":9000,"price":"$0.75875","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ff25a935851c47da4b5b7694cc562119.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional second-source for RJK03M2DPA-00#J5A?","answer":"The NP179N055TUK--AY is a higher-voltage (55 V) and higher-current (180 A) N-channel MOSFET in a different package (Tray). It is not a pin-compatible drop-in — the 8-WPAK footprint differs — but it serves as a functional alternative for designs that need more voltage and current headroom. Gate charge is 240 nC at 10 V, which requires a stronger gate driver."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJK03M2DPA-00J5A","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJK03M2DPA-00J5A when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}