{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"RJH65T14DPQ-A0#T0","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"RJH65T14DPQ-A0T0","canonicalUrl":"https://icboms.com/renesas/RJH65T14DPQ-A0T0","factsUrl":"https://icboms.com/api/mcp/products/RJH65T14DPQ-A0%23T0","rawCanonicalId":null},"summary":{"shortDescription":"Renesas RJH65T14DPQ-A0#T0, Trench IGBT, 650 V Vces, 100 A Ic, 1.75 V Vce(on) @ 50A/15V, 80 nC Qg, 250 W, TO-247A, 175 °C Tj, Active, ROHS3.","salesMarkdown":"The Renesas RJH65T14DPQ-A0#T0 is a 650 V, 100 A trench-gate IGBT in a TO-247A through-hole package. The trench structure delivers a low on-state voltage of 1.75 V typical at 50 A and 15 V gate drive. ## Switching loss and gate drive — 80 nC Qg, 1.3 mJ / 1.2 mJ Eon/Eoff Total gate charge is 80 nC. Switching energy at 400 V, 50 A, 10 Ω gate resistor, 15 V gate drive is 1.3 mJ turn-on and 1.2 mJ turn-off. Turn-on delay is 38 ns and turn-off delay is 125 ns at 25 °C, giving a fast enough edge for hard-switching topologies. The co-packaged diode has a reverse recovery time of 250 ns, which contributes to turn-on loss and EMI in bridge-leg configurations. ## Thermal headroom — 175 °C junction temperature Rated for a maximum junction temperature of 175 °C. The TO-247A package variant has an enlarged copper tab for improved heat transfer. ROHS3 compliant.","metaTitle":"RJH65T14DPQ-A0#T0 IGBT, 650V 100A Trench, TO-247A, Active","metaDescription":"RJH65T14DPQ-A0#T0 Trench IGBT, 650 V Vces, 100 A Ic, 1.75 V Vce(on) at 50 A, 175 °C Tj, TO-247A. Active production, quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","IGBT Type":"Trench","Input Type":"Standard","Gate Charge":"80 nC","Power - Max":"250 W","Mounting Type":"Through Hole","Package / Case":"TO-247-3","Test Condition":"400V, 50A, 10Ohm, 15V","lifecycle_stage":"eol_hot","Switching Energy":"1.3mJ (on), 1.2mJ (off)","Td (on/off) @ 25°C":"38ns/125ns","Operating Temperature":"175°C (TJ)","Supplier Device Package":"TO-247A","Vce(on) (Max) @ Vge, Ic":"1.75V @ 15V, 50A","Reverse Recovery Time (trr)":"250 ns","Current - Collector (Ic) (Max)":"100 A","Voltage - Collector Emitter Breakdown (Max)":"650 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.79","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.79000","currency":"USD"},{"qty":10,"price":"$4.01800","currency":"USD"},{"qty":100,"price":"$3.25060","currency":"USD"},{"qty":500,"price":"$2.88940","currency":"USD"},{"qty":1000,"price":"$2.47406","currency":"USD"},{"qty":2000,"price":"$2.32959","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/be01e529e1e2c622de81b5e6491a680a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Vce(on) of RJH65T14DPQ-A0#T0?","answer":"The maximum Vce(on) is 1.75 V at 15 V gate drive and 50 A collector current."},{"question":"What is the switching energy of RJH65T14DPQ-A0#T0?","answer":"At 400 V, 50 A, 10 Ω gate resistor, and 15 V gate drive, the turn-on energy is 1.3 mJ and turn-off energy is 1.2 mJ."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/RJH65T14DPQ-A0T0","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/RJH65T14DPQ-A0T0 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}