{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"R6576ENZ4C13","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"R6576ENZ4C13","canonicalUrl":"https://icboms.com/rohm/R6576ENZ4C13","factsUrl":"https://icboms.com/api/mcp/products/R6576ENZ4C13","rawCanonicalId":null},"summary":{"shortDescription":"ROHM Semiconductor R6576ENZ4C13 N-Channel MOSFET, 650V Vdss, 76A Id, 46mOhm Rds(on), TO-247-3, Tube.","salesMarkdown":"## 650V, 76A — the switching loss trade-off The R6576ENZ4C13 is a 650V, 76A N-channel power MOSFET in a TO-247 through-hole package, built on ROHM's low-noise planar stripe process. The 46mOhm typical Rds(on) at 44.4A with 10V gate drive gives a conduction loss of about 90W at full rated current — budget the junction temperature rise against the 735W Tc-rated dissipation ceiling. ## Gate charge and switching speed Total gate charge Qg is 260nC at Vgs=10V, and the input capacitance Ciss measures 6500pF at Vds=25V. For a hard-switched converter running at 50kHz, the gate driver must supply roughly 13mA average current just to charge and discharge the gate — a standard 1A driver handles it easily, but the 260nC figure sets the switching loss floor at higher frequencies. The 4V maximum gate threshold at 2.96mA drain current means the device is fully enhanced with a standard 10V gate drive, but the 4V Vgs(th) ceiling also means it will not fully turn on with a 5V logic-level gate signal — plan for a dedicated gate-driver rail or bootstrap supply above 10V. ## Package and thermal path Housed in a TO-247-3 (supplier device package TO-247), the through-hole mounting gives a low-inductance Kelvin source connection option for the gate-drive return — the large backside tab is the drain, and the copper pad area on the heatsink sets the junction-to-case thermal resistance. The 150°C maximum junction temperature allows a 50°C margin above a typical 100°C case temperature at full rated current.","metaTitle":"R6576ENZ4C13 ROHM 650V 76A N-Channel MOSFET TO-247","metaDescription":"ROHM R6576ENZ4C13 650V 76A N-Channel MOSFET in TO-247. 46mOhm Rds(on), 260nC gate charge. Active production, ROHS3 compliant. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 2.96mA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"46mOhm @ 44.4A, 10V","Power Dissipation (Max)":"735W (Tc)","Supplier Device Package":"TO-247","Gate Charge (Qg) (Max) @ Vgs":"260 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"6500 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"76A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$19.47","stockQuantity":28,"priceTiers":[{"qty":1,"price":"$19.47000","currency":"USD"},{"qty":10,"price":"$17.89200","currency":"USD"},{"qty":100,"price":"$15.11080","currency":"USD"},{"qty":500,"price":"$13.44216","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/dd62483b9caed4d88c6ba26cb41aacec.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/R6576ENZ4C13","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/R6576ENZ4C13 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}