{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"R6509END3TL1","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"R6509END3TL1","canonicalUrl":"https://icboms.com/rohm/R6509END3TL1","factsUrl":"https://icboms.com/api/mcp/products/R6509END3TL1","rawCanonicalId":null},"summary":{"shortDescription":"ROHM Semiconductor R6509END3TL1 N-Channel MOSFET, 650 V, 9 A, TO-252-3 (DPak), 585 mOhm Rds(on) at 10 V, 24 nC gate charge.","salesMarkdown":"## 650 V, 9 A — loss budget and switching trajectory The R6509END3TL1: Gate charge totals 24 nC at 10 V, and input capacitance is 430 pF at 25 V drain — these set the switching loss in hard-switched topologies. A driver capable of sourcing 1 A can turn the gate on in about 24 ns, keeping crossover losses manageable at switching frequencies up to 100 kHz. ## Compliance and regulatory status RoHS3 compliant (no exemption-based lead content), which simplifies EU and California regulatory reporting for the finished assembly.","metaTitle":"ROHM R6509END3TL1 N-Channel MOSFET, 650V 9A TO-252","metaDescription":"Active ROHM R6509END3TL1 N-channel MOSFET, 650V Vdss, 9A Id, 585mOhm Rds(on) at 10V. TO-252 surface-mount. RoHS3. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 230µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"585mOhm @ 2.8A, 10V","Power Dissipation (Max)":"94W (Tc)","Supplier Device Package":"TO-252","Gate Charge (Qg) (Max) @ Vgs":"24 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"430 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.16","stockQuantity":17,"priceTiers":[{"qty":1,"price":"$2.16000","currency":"USD"},{"qty":10,"price":"$1.79600","currency":"USD"},{"qty":100,"price":"$1.42990","currency":"USD"},{"qty":500,"price":"$1.20988","currency":"USD"},{"qty":1000,"price":"$1.02656","currency":"USD"},{"qty":2500,"price":"$0.97524","currency":"USD"},{"qty":5000,"price":"$0.93857","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f6abb8bb6c8875b1bed362384105db65.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the R6509END3TL1's Rds(on) at operating temperature?","answer":"The datasheet lists 585 mOhm maximum at 25 °C junction and 10 V gate drive. At 125 °C junction, expect the on-resistance to roughly double — approximately 1.2 Ohm — so conduction loss calculations should use the hot value, not the 25 °C headline."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/R6509END3TL1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/R6509END3TL1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}