{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"QS5Y1TR","brand":"ROHM Semiconductor","brandSlug":"rohm","productSlug":"QS5Y1TR","canonicalUrl":"https://icboms.com/rohm/QS5Y1TR","factsUrl":"https://icboms.com/api/mcp/products/QS5Y1TR","rawCanonicalId":null},"summary":{"shortDescription":"QS5Y1TR, ROHM Semiconductor, NPN/PNP emitter-coupled transistor pair, 30V Vceo, 3A Ic, 300/270MHz transition frequency, SOT-23-5 thin TSOT-23-5 package, 1.25W power dissipation, active, RoHS3 compliant.","salesMarkdown":"## Emitter-coupled NPN/PNP pair in a thin SOT-23-5 The ROHM Semiconductor QS5Y1TR is a dual transistor — one NPN and one PNP die in a single SOT-23-5 Thin / TSOT-23-5 package, with the emitters internally connected. It is rated for a collector-emitter breakdown voltage of 30 V and a continuous collector current of 3 A, with a maximum power dissipation of 1.25 W. The transition frequency is 300 MHz for the NPN side and 270 MHz for the PNP side. This part is intended for general-purpose switching and amplification where a complementary pair is needed in a small footprint. The 30 V Vceo sets the maximum supply rail you can connect across the collector-emitter terminals. A 24 V industrial bus is comfortable; a 48 V telecom rail is not. The 3 A collector current rating is the continuous limit per die — but at 30 V and 3 A the die dissipates 90 W, far above the 1.25 W package limit, so real-world DC current at 30 V will be derated to roughly 40 mA. The part is better suited to pulsed or saturated switching where the average power stays under the 1.25 W ceiling. Saturation voltage is specified at 400 mV maximum when driven with 50 mA base current into a 1 A collector load — a forced beta of 20, which is typical for a saturated switch. The minimum DC current gain is 200 at 500 mA, 2 V, so the part has plenty of headroom in the linear region for pre-driver stages. ## Package and mounting details The QS5Y1TR is supplied in a TSMT5 package (the supplier device package designation), which is the thin SOT-23-5 variant. It is a surface-mount device. The shipping options are Tape & Reel or Cut Tape. The operating junction temperature is rated to 150 °C, suitable for industrial environments where the PCB may see elevated temperatures. ## Lifecycle and compliance It is RoHS3 compliant (2015/863/EU), free of the ten restricted substances including the four phthalates.","metaTitle":"QS5Y1TR NPN/PNP transistor, 30V 3A TSMT5","metaDescription":"QS5Y1TR is an emitter-coupled NPN/PNP transistor pair rated 30V Vceo, 3A Ic, 1.25W max power. SOT-23-5 thin package. Active, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","Power - Max":"1.25W","Mounting Type":"Surface Mount","Package / Case":"SOT-23-5 Thin, TSOT-23-5","Transistor Type":"NPN, PNP (Emitter Coupled)","lifecycle_stage":"eol_hot","Operating Temperature":"150°C (TJ)","Frequency - Transition":"300MHz, 270MHz","Supplier Device Package":"TSMT5","Vce Saturation (Max) @ Ib, Ic":"400mV @ 50mA, 1A","Current - Collector (Ic) (Max)":"3A","Current - Collector Cutoff (Max)":"1µA (ICBO)","DC Current Gain (hFE) (Min) @ Ic, Vce":"200 @ 500mA, 2V","Voltage - Collector Emitter Breakdown (Max)":"30V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.74","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.74000","currency":"USD"},{"qty":10,"price":"$0.65100","currency":"USD"},{"qty":100,"price":"$0.49940","currency":"USD"},{"qty":500,"price":"$0.39480","currency":"USD"},{"qty":1000,"price":"$0.31584","currency":"USD"},{"qty":3000,"price":"$0.28623","currency":"USD"},{"qty":6000,"price":"$0.26649","currency":"USD"},{"qty":15000,"price":"$0.25662","currency":"USD"},{"qty":30000,"price":"$0.25004","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f46a0625f6d6219fa5e6763ccc009002.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent of QS5Y1TR?","answer":"The emitter-coupled NPN/PNP configuration in a TSOT-23-5 package is relatively uncommon; a substitution would require a board layout change to accommodate two discrete transistors or a different complementary pair."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/rohm/QS5Y1TR","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/rohm/QS5Y1TR when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}