{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"PSMN7R8-120ESQ","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"PSMN7R8-120ESQ","canonicalUrl":"https://icboms.com/nxp/PSMN7R8-120ESQ","factsUrl":"https://icboms.com/api/mcp/products/PSMN7R8-120ESQ","rawCanonicalId":null},"summary":{"shortDescription":"Nexperia PSMN7R8-120ESQ, N-channel MOSFET, 120 V Vdss, 7.9 mOhm Rds(on) max at 25 A, 70 A continuous drain, TO-262-3 (I2PAK) through-hole, -55 to 175 °C.","salesMarkdown":"## 167 nC gate charge — sizing the driver Total gate charge is 167 nC at 10 V. For a hard-switched bridge running at 100 kHz, the average gate-drive current works out to roughly 16.7 mA — within the capability of most dedicated MOSFET drivers, but the peak current during the Miller plateau still needs a low-impedance drive path. Input capacitance is 9473 pF at 60 V drain-source, which dominates the switching losses at light load. ## Active, ROHS3, wide junction range It is ROHS3 compliant. ## Through-hole I2PAK — board-mounting reality The TO-262-3 (I2PAK) is a through-hole package with long leads, designed for the same footprint as D2PAK but with the leads bent for vertical PCB mounting. The 349 W power dissipation rating at case temperature assumes a large copper pad on the board side or a heatsink clamped to the exposed metal tab. The 4 V gate threshold at 1 mA drain current means a 5 V logic-level gate drive will not fully enhance the channel — a 10 V rail is needed to reach the rated Rds(on).","metaTitle":"PSMN7R8-120ESQ N-Channel MOSFET, 120 V, 7.9 mOhm, TO-262","metaDescription":"Nexperia PSMN7R8-120ESQ N-channel MOSFET, 120 V Vdss, 7.9 mOhm Rds(on) at 25 A, 70 A continuous drain, TO-262-3 (I2PAK). Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"7.9mOhm @ 25A, 10V","Power Dissipation (Max)":"349W (Tc)","Supplier Device Package":"I2PAK","Gate Charge (Qg) (Max) @ Vgs":"167 nC @ 10 V","Drain to Source Voltage (Vdss)":"120 V","Input Capacitance (Ciss) (Max) @ Vds":"9473 pF @ 60 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"70A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0","stockQuantity":0,"priceTiers":[{"qty":301,"price":"$1.00000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c238b66bbefc6ac70105f0a2408f629b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of PSMN7R8-120ESQ?","answer":"This is the conduction-loss spec for heatsink and efficiency calculations."},{"question":"What is the PSMN7R8-120ESQ equivalent?","answer":"The part is a standard TO-262 N-channel MOSFET — any replacement would need to match the 120 V Vdss, 7.9 mOhm Rds(on), and I2PAK footprint."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/PSMN7R8-120ESQ","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/PSMN7R8-120ESQ when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}