{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"PMV100XPEA215","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"PMV100XPEA215","canonicalUrl":"https://icboms.com/nxp/PMV100XPEA215","factsUrl":"https://icboms.com/api/mcp/products/PMV100XPEA215","rawCanonicalId":null},"summary":{"shortDescription":"Nexperia PMV100XPEA215, P-Channel MOSFET, 20V Vdss, 2.4A Id, 128mOhm Rds(on) at 4.5V, SOT-23, -55°C to 150°C, Active.","salesMarkdown":"With a maximum gate charge of 6 nC at 4.5 V, the PMV100XPEA215 switches fast with modest drive current. In a 500 kHz buck converter the gate-drive loss stays low enough that the SOT-23 package can handle the dissipation without derating. The 386 pF input capacitance at 10 V Vds confirms the switching speed is limited more by the gate-drive impedance than by the device itself. ## Thermal reality in a SOT-23 The 463 mW power dissipation at 25°C ambient (Ta) is the number to use for board-level thermal design without a heatsink. The 4.45 W at case temperature (Tc) assumes a thermal pad or copper area on the PCB — in practice, layout engineers should stitch the SOT-23's tab via to a ground plane pour to keep junction temperature under 150°C at the 2.4 A continuous rating.","metaTitle":"Nexperia PMV100XPEA215 P-Channel MOSFET, 20V, 2.4A, SOT-23","metaDescription":"Nexperia PMV100XPEA215 P-Channel MOSFET in SOT-23: 20V Vdss, 2.4A Id, 128mOhm Rds(on) at 4.5V. Active lifecycle, -55°C to 150°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"NXP Semiconductors","Series":"-","Package":"Bulk","FET Type":"P-Channel","Vgs (Max)":"±12V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.25V @ 250µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"128mOhm @ 2.4A, 4.5V","Power Dissipation (Max)":"463mW (Ta), 4.45W (Tc)","Supplier Device Package":"SOT-23","Gate Charge (Qg) (Max) @ Vgs":"6 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"20 V","Input Capacitance (Ciss) (Max) @ Vds":"386 pF @ 10 V","Current - Continuous Drain (Id) @ 25°C":"2.4A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.2055","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c1dd30e5bd9ebdef2eb5f36cac1db9a6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/PMV100XPEA215/alternatives.json"},"ai":{"faq":[{"question":"What is the gate charge of the PMV100XPEA215?","answer":"The maximum gate charge is 6 nC at 4.5 V gate-source voltage. This low charge enables fast switching with minimal gate-drive power loss."},{"question":"Can the PMV100XPEA215 be used for battery protection circuits?","answer":"Yes. The 20 V drain-source rating and 2.4 A continuous current cover single-cell Li-ion and Li-polymer protection (typically 4.2 V nominal) with margin. The 128 mOhm Rds(on) at 4.5 V keeps conduction losses low, and the P-Channel polarity allows high-side switching without a charge pump."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/PMV100XPEA215","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/PMV100XPEA215 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}