{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"PHB20N06T,118","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"PHB20N06T118","canonicalUrl":"https://icboms.com/nxp/PHB20N06T118","factsUrl":"https://icboms.com/api/mcp/products/PHB20N06T%2C118","rawCanonicalId":null},"summary":{"shortDescription":"Nexperia TrenchMOS series, PHB20N06T,118, N-channel MOSFET, 55 V Vdss, 20.3 A Id, 75 mOhm Rds(on) at 10 V, 11 nC Qg, D2PAK (TO-263AB), -55°C to 175°C TJ.","salesMarkdown":"The Nexperia PHB20N06T,118 is a TrenchMOS N-channel MOSFET rated 55 V drain-source and 20.3 A continuous drain current at a 25°C case temperature, housed in a surface-mount D2PAK (TO-263AB) package. ## 75 mOhm Rds(on) and 11 nC Qg — switching loss trade-off The 75 mOhm Rds(on) at Vgs=10 V sets the conduction loss floor. Gate charge of 11 nC at 10 V and 483 pF input capacitance at 25 V Vds define the switching drive requirements.","metaTitle":"Nexperia PHB20N06T,118 N-Channel MOSFET, 55V 20.3A D2PAK","metaDescription":"Nexperia PHB20N06T,118 TrenchMOS N-channel MOSFET, 55 V Vdss, 20.3 A Id, 75 mOhm Rds(on), D2PAK. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"TrenchMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"TrenchMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"75mOhm @ 10A, 10V","Power Dissipation (Max)":"62W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"11 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"483 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.35","stockQuantity":0,"priceTiers":[{"qty":863,"price":"$0.35000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/518b12cd39824a4c94f992ded7b9a480.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can the PHB20N06T,118 be used as a replacement for other N-channel MOSFETs?","answer":"It can serve as a replacement for any N-channel MOSFET in a D2PAK package with equal or lower voltage and current ratings, provided the gate drive voltage is 10 V and the switching frequency keeps the gate charge losses within the thermal budget. The 55 V Vdss and 20.3 A Id set the upper bound; the replacement must not exceed these limits."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/PHB20N06T118","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/PHB20N06T118 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}