{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP90N055VUK-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP90N055VUK-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP90N055VUK-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP90N055VUK-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Nexperia NP90N055VUK--AY, N-Channel MOSFET, 55 V drain-source, 90 A continuous drain at 25°C, 3.85 mOhm max Rds(on) at 45 A, 5 V gate drive, TO-252-3 (DPak) surface-mount package, 175°C junction temperature, ROHS3 compliant.","salesMarkdown":"## 3.85 mOhm at 5 V gate drive — no separate gate driver needed The NP90N055VUK-E1-AY: Maximum on-resistance is 3.85 mOhm at 45 A drain current with 5 V applied to the gate. ## TO-252-3 DPak — the surface-mount power tab Packaged in TO-252-3 (DPak), a three-lead surface-mount case with a large drain tab. The tab is the drain connection, so the PCB copper pour under the part serves as both electrical node and heatsink. Thermal resistance to case is the dominant path — the 147 W power dissipation at case temperature versus 1.2 W in still air tells you this part needs a copper land or an external heatsink to deliver its full 90 A rating. Board layout should follow the typical DPak footprint with multiple vias to an inner-layer copper plane.","metaTitle":"NP90N055VUK-E1-AY N-Channel MOSFET, 55V 90A TO-252-3","metaDescription":"NP90N055VUK-E1-AY N-channel MOSFET, 55 V drain-source, 90 A continuous, 3.85 mOhm Rds(on) at 5 V. Active, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.85mOhm @ 45A, 5V","Power Dissipation (Max)":"1.2W (Ta), 147W (Tc)","Supplier Device Package":"TO-252-3","Gate Charge (Qg) (Max) @ Vgs":"102 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"6000 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"90A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.78","priceTiers":[{"qty":1,"price":"$1.78000","currency":"USD"},{"qty":10,"price":"$1.60200","currency":"USD"},{"qty":100,"price":"$1.28770","currency":"USD"},{"qty":500,"price":"$1.05796","currency":"USD"},{"qty":1000,"price":"$0.87660","currency":"USD"},{"qty":2500,"price":"$0.81614","currency":"USD"},{"qty":5000,"price":"$0.79100","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6b7f4bed5d4678ab41d2b33abe1df982.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/NP90N055VUK-E1-AY/alternatives.json"},"ai":{"faq":[{"question":"What is NP90N055VUK--AY's listed FET type?","answer":"It is an N-Channel MOSFET, using standard Metal Oxide semiconductor technology."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP90N055VUK-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP90N055VUK-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}