{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP75N055YUK-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP75N055YUK-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP75N055YUK-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP75N055YUK-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Renesas NP75N055YUK--AY, Automotive AEC-Q101 N-Channel MOSFET, 55V Vdss, 75A Id, 4.5mOhm Rds(on) at 10V, 83nC Qg, 175°C Tj, Surface Mount 8-PowerLDFN / 8-HSON (5x5.4).","salesMarkdown":"The NP75N055YUK-E1-AY: The NP75N055YUK--AY: The Renesas NP75N055YUK--AY is an N-channel power MOSFET in the Automotive AEC-Q101 series, built for 12V and 24V vehicle electrical systems where load-dump transients can push the bus above 40V. With a 55V drain-source breakdown voltage, it clears the 40V load-dump clamp with margin, and the 75A continuous drain rating at 25°C case temperature covers high-current paths like battery isolation, electric oil pumps, and DC-DC converter input stages. The 4.5 mOhm maximum on-resistance at 10V gate drive and 38A load keeps conduction losses under 13W at full current — manageable with the 138W package limit at case temperature (Tc) if the PCB thermal design pulls heat into the board. The 1W derating at ambient (Ta) means this part needs a heatsink or copper pour for anything above light load; the 8-HSON (5x5.4) exposed pad is sized for solder-down to a thermal land. ## Gate drive and switching — 83 nC Qg sets the driver budget Total gate charge of 83 nC at 10V means the gate driver must supply about 8.3 µC per switching cycle. At 100 kHz switching, that's 0.83 A average gate current; a standard 1 A gate-driver IC handles it cleanly. The 5300 pF input capacitance at 25V drain bias confirms moderate gate capacitance — expect rise/fall times in the tens of nanoseconds with a 10V drive, which keeps cross-conduction losses low in hard-switched topologies. ## 175°C junction — under-hood thermal margin Rated for a maximum junction temperature of 175°C, this MOSFET suits engine bay and transmission-mounted electronics where ambient can hit 125°C. The 4V maximum gate threshold at 250 µA drain current means the part fully enhances with standard 5V or 10V logic-level gate drives, but the 10V drive voltage for minimum Rds(on) is the recommended rail for lowest conduction loss. ## Package and mounting — 8-PowerLDFN / 8-HSON Surface-mount in the 8-PowerLDFN package (supplier device package 8-HSON, 5x5.4 mm body). The exposed pad is the drain connection — the PCB land pattern must replicate the pad dimensions for thermal and electrical contact. ROHS3 compliant. AEC-Q101 qualification is confirmed by the series designation, covering the qualification flow for automotive stress tests (HBM, CDM, HTOL, HTRB, etc.).","metaTitle":"NP75N055YUK-E1-AY N-Channel MOSFET, 55V 75A, AEC-Q101","metaDescription":"NP75N055YUK-E1-AY automotive N-channel MOSFET, 55V Vdss, 75A Id, 4.5 mOhm Rds(on) at 10V. AEC-Q101 qualified, 175°C Tj.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"Automotive, AEC-Q101","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerLDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"175°C","Rds On (Max) @ Id, Vgs":"4.5mOhm @ 38A, 10V","Power Dissipation (Max)":"1W (Ta), 138W (Tc)","Supplier Device Package":"8-HSON (5x5.4)","Gate Charge (Qg) (Max) @ Vgs":"83 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"5300 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.01","priceTiers":[{"qty":1,"price":"$2.01000","currency":"USD"},{"qty":10,"price":"$1.80900","currency":"USD"},{"qty":100,"price":"$1.45410","currency":"USD"},{"qty":500,"price":"$1.19466","currency":"USD"},{"qty":1000,"price":"$0.98986","currency":"USD"},{"qty":2500,"price":"$0.92159","currency":"USD"},{"qty":5000,"price":"$0.89320","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1eecdca753c089ee828631d3ec2348ae.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/NP75N055YUK-E1-AY/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy NP75N055YUK--AY available via RFQ confirmation?","answer":"No firm stock count is published here."},{"question":"Does NP75N055YUK--AY have AEC-Q101 qualification?","answer":"Yes. The series is designated Automotive, AEC-Q101, which means the part has passed the automotive-grade qualification flow including HBM, CDM, HTOL, and HTRB stress tests."},{"question":"What is the typical on-resistance of NP75N055YUK--AY at 10V?","answer":"The maximum Rds(on) at 10V gate drive and 38A drain current is 4.5 mOhm. Typical values are lower but not specified in the record; the 4.5 mOhm max is the figure to use for worst-case conduction loss budgeting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP75N055YUK-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP75N055YUK-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}