{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP50P03YDG-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP50P03YDG-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP50P03YDG-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP50P03YDG-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Renesas NP50P03YDG--AY, P-Channel MOSFET, 30 V Vdss, 50 A continuous drain, 8.4 mOhm Rds(on) at 10 V, 96 nC gate charge, 8-HSON package, surface mount, ROHS3 compliant.","salesMarkdown":"The NP50P03YDG-E1-AY: The NP50P03YDG--AY is a 30 V, 50 A P-channel MOSFET in an 8-HSON flat-lead exposed-pad package. ## Thermal budget and the exposed-pad requirement The power dissipation rating splits sharply: 1 W at 25 °C ambient with no heatsink, versus 102 W when the case temperature is held at 25 °C — that gap tells you the exposed pad (the HSON package's primary thermal path) must be soldered to a substantial copper plane, ideally with thermal vias to inner layers. The junction temperature limit is 175 °C, which gives headroom for automotive under-hood or industrial environments, but the 1 W ambient rating means any continuous load above a few amps demands a good thermal connection to the PCB. ## Gate drive and switching speed The gate charge is 96 nC at 10 V, and the drive voltage range (5 V to 10 V for rated Rds(on)) means a 5 V logic-level gate signal will work but the on-resistance will be higher than the 8.4 mOhm spec — the 10 V drive gives the lowest conduction loss. Input capacitance is 3500 pF at 25 V drain — moderate for a 50 A part; the gate-driver output must deliver the 96 nC charge in the target switching interval to keep switching losses under control.","metaTitle":"NP50P03YDG-E1-AY P-Channel MOSFET, 30 V, 50 A, 8-HSON","metaDescription":"NP50P03YDG-E1-AY P-channel MOSFET from Renesas, 30 V Vdss, 50 A continuous drain, 8.4 mOhm Rds(on) at 10 V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SMD, Flat Lead Exposed Pad","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"8.4mOhm @ 25A, 10V","Power Dissipation (Max)":"1W (Ta), 102W (Tc)","Supplier Device Package":"8-HSON","Gate Charge (Qg) (Max) @ Vgs":"96 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"3500 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.27","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.27000","currency":"USD"},{"qty":10,"price":"$1.88300","currency":"USD"},{"qty":100,"price":"$1.49880","currency":"USD"},{"qty":500,"price":"$1.26820","currency":"USD"},{"qty":1000,"price":"$1.07605","currency":"USD"},{"qty":2500,"price":"$1.02225","currency":"USD"},{"qty":5000,"price":"$0.98382","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/019a59e33abbd4225cf7ed460e458239.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP50P03YDG-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP50P03YDG-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}