{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP36P06KDG-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP36P06KDG-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP36P06KDG-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP36P06KDG-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Renesas NP36P06KDG--AY, P-Channel MOSFET, 60 V Vdss, 36 A Id, 29.5 mOhm Rds(on) at 10 V, 54 nC gate charge, TO-263-3 (D²Pak) surface mount, 175 °C junction temperature.","salesMarkdown":"## P-Channel power switch for 24 V / 48 V rails The NP36P06KDG-E1-AY: P-Channel MOSFET, 60 V drain-source, 36 A continuous drain, 29.5 mOhm Rds(on) at 10 V gate drive. ## Thermal and package reality The TO-263-3 (D²Pak) surface-mount package exposes a large copper tab on the bottom — the thermal pad. Power dissipation is rated at 1.8 W in still air (Ta) and 56 W when the tab is soldered to a sufficient board copper area (Tc). ## Gate drive and switching behaviour Rds(on) is specified at 4.5 V and 10 V gate drive. Input capacitance is 3100 pF at 10 V drain-source; total gate charge is 54 nC at 10 V.","metaTitle":"NP36P06KDG-E1-AY P-Channel MOSFET, 60 V, 36 A, 29.5 mOhm","metaDescription":"NP36P06KDG-E1-AY P-Channel MOSFET, 60 V drain-source, 36 A continuous drain, 29.5 mOhm Rds(on) at 10 V drive. TO-263 surface mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 1mA","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"29.5mOhm @ 18A, 10V","Power Dissipation (Max)":"1.8W (Ta), 56W (Tc)","Supplier Device Package":"TO-263","Gate Charge (Qg) (Max) @ Vgs":"54 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"3100 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"36A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.17","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.79000","currency":"USD"},{"qty":800,"price":"$1.13474","currency":"USD"},{"qty":1600,"price":"$0.94021","currency":"USD"},{"qty":2400,"price":"$0.87537","currency":"USD"},{"qty":5600,"price":"$0.84840","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/686df611f933c39037278f6c10848654.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of NP36P06KDG--AY?","answer":"Total gate charge is 54 nC at 10 V gate-source voltage. This is the charge the gate driver must supply to switch the MOSFET on; at 50 kHz switching frequency the average gate-drive current is about 2.7 mA."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP36P06KDG-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP36P06KDG-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}