{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP35N04YLG-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP35N04YLG-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP35N04YLG-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP35N04YLG-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Renesas NP35N04YLG--AY, N-Channel MOSFET, 40V Vdss, 35A Id, 9.7mOhm Rds(on) @ 10V, 8-HSON Surface Mount, 175°C Tj max.","salesMarkdown":"## 40V, 35A N-Channel — the switching MOSFET for 12V/24V rails The NP35N04YLG-E1-AY: The NP35N04YLG--AY is an N-Channel MOSFET with 40 V drain-to-source breakdown and 35 A continuous drain current. ## Rds(on) at 5V and 10V — what the gate drive budget buys For the full 35 A rating, plan on a 10 V gate supply or a dedicated gate driver. ## 8-HSON package — thermal pad and layout checklist The part comes in an 8-HSON flat-lead exposed-pad package. Power dissipation is rated 1 W at ambient and 77 W at case temperature. ## Gate charge and switching speed Total gate charge is 51 nC at 10 V, with input capacitance of 2850 pF at 25 V drain. Lifecycle status is Active with ROHS3 compliance.","metaTitle":"NP35N04YLG-E1-AY N-Channel MOSFET, 40V, 35A, 9.7mOhm","metaDescription":"NP35N04YLG-E1-AY N-Channel MOSFET from Renesas. 40V Vdss, 35A Id, 9.7mOhm Rds(on) at 10V. 8-HSON package. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SMD, Flat Lead Exposed Pad","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Operating Temperature":"175°C","Rds On (Max) @ Id, Vgs":"9.7mOhm @ 17.5A, 10V","Power Dissipation (Max)":"1W (Ta), 77W (Tc)","Supplier Device Package":"8-HSON","Gate Charge (Qg) (Max) @ Vgs":"51 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"2850 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"5V, 10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.66","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.66000","currency":"USD"},{"qty":10,"price":"$1.48700","currency":"USD"},{"qty":100,"price":"$1.15910","currency":"USD"},{"qty":500,"price":"$0.95754","currency":"USD"},{"qty":1000,"price":"$0.75596","currency":"USD"},{"qty":2500,"price":"$0.70556","currency":"USD"},{"qty":5000,"price":"$0.67028","currency":"USD"},{"qty":12500,"price":"$0.65940","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/543711640f66d18c7abee9a9f78a1666.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of NP35N04YLG--AY at 5V gate drive?","answer":"The datasheet specifies the maximum on-resistance at 9.7 mOhm with 10 V gate drive and 17.5 A drain current. At 5 V gate drive the Rds(on) will be higher than the 10 V figure; the exact value depends on junction temperature and current level. The drive voltage range is listed as 5 V to 10 V, so the part is characterised for both levels."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP35N04YLG-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP35N04YLG-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}