{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP179N055TUK-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP179N055TUK-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP179N055TUK-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP179N055TUK-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Renesas Electronics NP179N055TUK--AY, Automotive N-Channel MOSFET, 180 A continuous drain, 55 V Vdss, 1.75 mOhm Rds(on), TO-263-7 surface-mount package, AEC-Q101 qualified, Tray.","salesMarkdown":"## 180 A continuous drain, 55 V Vdss — power-train and load-switch fit The NP179N055TUK-E1-AY: The NP179N055TUK--AY is a 55 V, 180 A N-channel MOSFET from Renesas, packaged in a TO-263-7 (D²PAK-7) for surface-mount assembly. Its 1.75 mOhm max Rds(on) at 90 A and 10 V gate drive sets a floor for conduction losses in high-current switching — in a 100 A motor-drive phase leg, that resistance dissipates roughly 17.5 W at full load, within the 288 W Tc power-dissipation ceiling. ## AEC-Q101 automotive line — under-hood and chassis-domain deployment Qualified per AEC-Q101, the NP179N055TUK--AY carries the temperature and reliability screening required for engine-bay, transmission, and chassis electronics. The 175 °C maximum operating temperature gives margin above the 125 °C ambient of a typical under-hood ECU — the die can handle the self-heating from the 1.8 W Ta dissipation without derating the load current. The 55 V Vdss rating sits comfortably above the 12 V and 24 V automotive bus voltages, covering load-dump transients that can spike to 40 V on a 12 V system. The ±20 V max gate-source rating means a standard 10 V gate drive from a pre-regulator or gate-driver IC stays well within the SOA. ## Gate charge and capacitance — driver budget for fast switching 240 nC total gate charge at 10 V — this is the charge the driver must source to turn the FET fully on. For a 100 kHz switching frequency, the average gate-drive current needed is Qg × fsw = 24 mA, plus the shoot-through current during the Miller plateau. The 13950 pF input capacitance at 25 V Vds means the driver sees a capacitive load that slows the rise time; a driver with at least 2 A peak sink/source current keeps the switching edges under 100 ns. ## TO-263-7 package — thermal and layout checklist The TO-263-7 (D²PAK-7) has an exposed die-attach paddle on the bottom — the thermal pad must be soldered to a copper island on the PCB, with vias down to an inner-layer or backside plane to pull heat into the board. The 288 W Tc dissipation assumes the case temperature is held at 25 °C; in a real 85 °C ambient, the effective continuous current derates per the RthJC curve in the product drawing. ## Active lifecycle — no NRND or EOL risk Renesas lists the NP179N055TUK--AY as Active. ROHS3 compliant — no exemptions expiring. The part is suitable for both new-design insertion and existing BOM sustainment without a migration timeline.","metaTitle":"NP179N055TUK-E1-AY Renesas N-Channel MOSFET, 180A, 55V","metaDescription":"NP179N055TUK-E1-AY automotive N-channel MOSFET, 180A continuous drain, 55V Vdss, 1.75mOhm Rds(on). AEC-Q101 qualified. Active production. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Grade":"Automotive","Package":"Tray","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"175°C","Rds On (Max) @ Id, Vgs":"1.75mOhm @ 90A, 10V","Power Dissipation (Max)":"1.8W (Ta), 288W (Tc)","Supplier Device Package":"TO-263-7","Gate Charge (Qg) (Max) @ Vgs":"240 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"13950 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.95","stockQuantity":27,"priceTiers":[{"qty":1,"price":"$7.02000","currency":"USD"},{"qty":10,"price":"$6.34000","currency":"USD"},{"qty":25,"price":"$6.04520","currency":"USD"},{"qty":80,"price":"$5.24913","currency":"USD"},{"qty":230,"price":"$5.01317","currency":"USD"},{"qty":800,"price":"$4.57083","currency":"USD"},{"qty":1600,"price":"$3.98104","currency":"USD"},{"qty":2400,"price":"$3.85840","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/27cb21893cb1538e2cd615ab10f17d19.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of NP179N055TUK--AY at 10 V gate drive?","answer":"1.75 mOhm max at 90 A drain current and 10 V Vgs. This is the conduction loss floor for high-current switching — at 180 A the loss doubles to roughly 3.5 mOhm due to the Rds(on) positive temperature coefficient."},{"question":"What automotive qualification does NP179N055TUK--AY carry?","answer":"AEC-Q101 — the automotive discrete semiconductor qualification covering temperature grade, reliability stress, and PPAP documentation. Combined with the 175 °C operating temperature, it is suited for under-hood and chassis-domain electronics."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP179N055TUK-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP179N055TUK-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}