{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"NP110N04PUK-E1-AY","brand":"Renesas Electronics","brandSlug":"renesas","productSlug":"NP110N04PUK-E1-AY","canonicalUrl":"https://icboms.com/renesas/NP110N04PUK-E1-AY","factsUrl":"https://icboms.com/api/mcp/products/NP110N04PUK-E1-AY","rawCanonicalId":null},"summary":{"shortDescription":"Renesas NP110N04PUK--AY N-Channel MOSFET, 40 V Vdss, 110 A continuous drain, 1.4 mOhm Rds(on), TO-263-3 D²Pak, surface mount, active.","salesMarkdown":"The NP110N04PUK-E1-AY: A gate driver sourcing 2 A charges the gate in roughly 150 ns — fast enough for a 20-50 kHz switching regulator but the driver must handle the peak current. ## Thermal budget and package constraints Maximum junction temperature is 175°C. Power dissipation is 1.8 W at 25°C ambient in still air, but 348 W at 25°C case temperature when mounted on a sufficient heatsink — the TO-263-3 (D²Pak) tab carries the heat. The 110 A rating at Tc=25°C assumes the case is held near ambient; without a heatsink the current must be derated significantly to stay below the junction limit.","metaTitle":"Renesas NP110N04PUK-E1-AY N-Channel MOSFET, 40V, 110A","metaDescription":"Renesas NP110N04PUK-E1-AY N-Channel MOSFET, 40V Vdss, 110A continuous drain, 1.4mOhm Rds(on), TO-263-3 D²Pak. Active, ROHS3 compliant. Request a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4mOhm @ 55A, 10V","Power Dissipation (Max)":"1.8W (Ta), 348W (Tc)","Supplier Device Package":"TO-263-3","Gate Charge (Qg) (Max) @ Vgs":"297 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"15750 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"110A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.91","priceTiers":[{"qty":1,"price":"$4.91000","currency":"USD"},{"qty":10,"price":"$4.40600","currency":"USD"},{"qty":100,"price":"$3.60960","currency":"USD"},{"qty":800,"price":"$3.07283","currency":"USD"},{"qty":1600,"price":"$2.59154","currency":"USD"},{"qty":2400,"price":"$2.46196","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/860585fbfda57eb79db8f2e072ec8d4a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/NP110N04PUK-E1-AY/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional second-source for NP110N04PUK--AY?","answer":"The NP179N055TUK--AY is a peer N-Channel MOSFET in the same TO-263-3 package with a 55 V Vdss and 180 A rating, but it carries AEC-Q101 automotive qualification. The gate charge is 240 nC at 10 V and on-resistance is 1.75 mOhm at 90 A — a direct drop-in requires checking the gate-drive voltage and thermal budget against the higher Vdss."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/renesas/NP110N04PUK-E1-AY","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/renesas/NP110N04PUK-E1-AY when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}